First ALD based cermic capacitor

As repoted by Bargan Tech in Lesnoy Gorodok, Odintsovky District, Moscow Province who uses Atomic Layer Deposition (ALD)  to deposit nanoscale layers of the dielectric and conductor onto a porous carbon-based material - the primary electrode. This results in a very thin device with high specific capacity that is several orders of magnitude greater than existing multi-layer ceramic capacitors (MLCC).

The application of a highly porous material is a more progressive method of increasing capacity than 

(a) reducing the thickness of the dielectric; (b) numerous layering; (c) using dielectrics with high permittivity (ε), which are the methods used in the best ceramic capacitors today - the multi-layer ceramic capacitors.

 

The advantages of our single layer construction over multi-layer ceramic capacitors include:

• Higher specific capacity at comparable operating voltage.
• Absence of noise when operating at high frequency (high speed charging and discharging), caused by the difference in expansion dynamics of each layer (conductor and dielectric), which result from overheating.
• Infinite scalability; flexibility to produce high capacity devices using Class 1 ceramic materials which is a high quality ceramic with a low temperature/capacity dependence.
• Simple manufacturing process.

Datasheet (pdf) [339,38 Kb]

Proprietary electrode

The foundation of the technology, serving as the primary plate, is a carbon based material with macro and mesopores. A hybrid dielectric and the second plate are conformed to its surface - layer by layer - by Atomic Layer Deposition. The capacitor assembly is then completed using traditional methods. The material is a form of viscose cloth - heat treated in an oxygen-free environment.

 

As illustrated, its structure consists of uniformly shaped interwoven fibers. The surface of each fiber is vastly covered with pores ranging 30-300nm in diameter, which is sufficient for building the dielectric and conductor layers on their inner surfaces.