Oxford Instruments Secures Major Orders for GaN ALE & ALD Systems from Leading Japanese Power Electronics and RF fabs

Oxford Instruments has received significant orders for its GaN ALE (Atomic Layer Etch) and ALD (Atomic Layer Deposition) systems from major Japanese foundries specializing in power electronics and RF (Radio Frequency). These systems are essential for producing GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) devices, catering to rapidly growing markets such as consumer fast-charging, data centers, and 5G/6G communications.

Oxford Instruments Plasma Technology staff at ALD2018/ALE2018 in Korea (Looking Back on ALD/ALE 2018 - Oxford Instruments (oxinst.com))

The company's ALD technology is known for its high throughput and low damage plasma processing, enhancing film and interface quality. It is widely used by leading GaN HEMT device manufacturers globally. The ALE solution, particularly for p-GaN HEMTs, is production-qualified and offers precise etching with minimal damage, featuring Etchpoint®, a unique endpoint detection technology developed in collaboration with LayTec AG.

Atomic Scale Processing

Etchpoint® allows for automated transition from standard high-rate etching to low damage ALE, improving device reliability. It enables precise AlGaN recess etches, crucial for the next generation GaN MISHEMT E-mode devices, with an accuracy of ±0.5 nm. These technologies can be integrated into an automated handler for multi-chamber processing without breaking vacuum, enhancing device performance and yield at a lower cost.

Gallium Nitride (GaN) provides higher breakdown strength, faster switching speed, and higher thermal conductivity for power electronics and RF applications. To support the high-volume manufacture of reliable GaN HEMT devices, Oxford Instruments in collaboration with LayTec have developed and optimised a new etch-depth monitoring solution to reliably fabricate GaN HEMT device structures. PlasmaPro 100 ALE with Etchpoint® system provides low damage etching with surface smoothing with unparalleled accuracy in target etch depth for devices such as p-GaN HEMTs and recessed gate MISHEMTs. Etchpoint is fully integrated with both the hardware and software of the PlasmaPro 100 ALE system, offering unrivalled accuracy of etch layer depth for GaN and AlGaN.

Dr. Aileen O'Mahony, GaN Product Manager at Oxford Instruments Plasma Technology, highlighted the significance of these orders from Japan, emphasizing the optimization of their ALD solution for GaN-surface plasma pre-treatment and the implementation of ALE with Etchpoint®. These developments are crucial in addressing complex challenges in device manufacturing while ensuring high throughput, reliability, and uptime in production.

Source: Oxford Instruments : Significant orders of our GaN ALE and ALD Systems -November 23, 2023 at 08:42 am EST | MarketScreener