Wednesday, October 12, 2016

HP reports low energy Memristor precisely tuned by ALD

Nanotechweb reports: Researchers at Hewlett Packard Labs in California, the University of Massachusetts Amherst and Seoul National University are reporting on a new low-current, self-rectifying memristor made from titanium ion electron traps in a niobium oxide matrix. The device might be used as an embedded memory on low-power chips and for storing data in Internet of Things (IoT) appliances.
 
 
The memristor device (Pt/NbOx/TiOy/NbOx/TiN) is based on titanium ion electron traps in a niobium oxide (NbOx) matrix deposited by ALD. ALD allows control of the sub-atomic monolayers in the structure and so precisely control how the Ti traps are distributed in the NbOx matrix. (Figure from Nanotechweb.org)
 
According to the team, led by Stanley Williams, also of Hewlett Packard Labs, the new memristor could be used to make embedded memories for low-power chips, such as ASICS. “Since the technology is fully CMOS compatible, it might also be used to store data in or near sensors at the edge of IoT devices,” says Kim. “Eventually, it might find use as a stand-alone non-volatile memory for low-power systems.”