Friday, October 28, 2016

Ferroelectric memory startup aims at GloFo's 22FDX at Fab1 in Dresden

Here is good and promising news about the Ferroelectric Mmeorz Company (FCM) in Dresden (as published by EE Times):
 
TEM of FeFET processed in 28 nm high-k metal gate CMOS Technology (left) and 2D TCAD-model for device simulation (right). (Picture from NaMLab)
 
The company, a spin-off from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden, is making use of the recently discovered ferroelectric effect in silicon-doped hafnium dioxide. The company has made progress over the last year in terms of establishing hafnium ferroelectric memory as design choice for embedded nonvolatile memory in 28nm processes and below. 

The 64kbit active array was developed with Globalfoundries Inc. and is the subject of a paper due to be presented at the upcoming International Electron Devices Meeting (IEDM) in San Francisco in December. Meanwhile FMC is seeking funds. Having received more than €4 million (about $4.4 million) in government grants the company says it is looking approximately €2 million more Series A funding round.

Continue reading in EE Times about FCM here: 

Ferroelectric memory startup aims at GloFo's 22FDX

Electronics EETimes (registration)-vor 20 Stunden
The company, a spin-off from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden, is making use of the recently ...

Dresden Memory Startup To Debut At Semicon Europa

EE Times-15.09.2015
The company is the product of work at NaMLab on the ferroelectric effect in thin films of silicon-doped hafnium dioxide. That work was, in turn, ...