%20(1).png)
Memory Workshop (IMW), 2014 IEEE 6th International
Date of Conference: 18-21 May 2014 Page(s): 1 - 4 Print ISBN: 978-1-4799-3594-9 Conference Location : Taipei, Taiwan DOI:10.1109/IMW.2014.6849367
Aiming for future nonvolatile memory applications the fabrication and electrical characterization of 3-dimensional trench capacitors based on ferroelectric HfO2 is reported. It will be shown that the ferroelectric properties of Al-doped HfO2 ultrathin films are preserved when integrated into 3-dimensional geometries. The Al:HfO2 thin films were deposited by ALD and electrical data were collected on trench capacitor arrays with a trench count up to 100k. Stable ferroelectric switching behavior was observed for all trench arrays fabricated and only minimal remanent polarization loss with increasing 3-dimensional area gain was observed. In addition these arrays were found to withstand 2∗109 endurance cycles at saturated hysteresis loops. With these report the 3D capability of ferroelectric HfO2 is confirmed and for the first time a feasible solution for the vertical integration of ferroelectric 1T/1C as well as 1T memories is presented.
Process flow scheme for the fabricated ferroelectric deep trench capacitors with high aspect ratio of 13:1 and the accordingly measured hysteresis loop of a 3D deep trench capacitor
high voltage film capacitors You made such an interesting piece to read, giving every subject enlightenment for us to gain knowledge. Thanks for sharing the such information with us to read this...
ReplyDeletevery interesting post.this is my first time visit here.i found so mmany interesting stuff in your blog especially its discussion..thanks for the post! high voltage high power resistor
ReplyDeleteOn that website page, you'll see your description, why not read through this. trenchless sewer
ReplyDelete