Digital Specialty Chemicals HVM production of UHP PDMAT for ALD-TaN

As reported by Digital Specialty Chemicals in a Solid State Technology Blog - An Improved methods of purification have been used to produce microcrystalline pale yellow PDMAT with purity of >99.99995%

 

 

Improved methods of purification have been used to produce microcrystalline pale yellow PDMAT with purity of >99.99995% (determined by trace metals and other spectroscopic methods) with extremely low chloride (<10ppm), low oxygen and total trace metals. (Picture from Solid State Technology Blog)

HVM production and challenges of UHP PDMAT for ALD-TaN

For sub-22nm device generations, device manufacturers are likely to adopt PDMAT precursor for ALD-TaN barrier films for copper interconnect structures.

BY LEIJUN HAO, RAVI K. LAXMAN and SCOTT A. LANEMAN, Digital Specialty Chemicals, Toronto, Ontario, Canada.

At sub-micron device technology, copper is the interconnect metal of choice because of low resistivity, 1.7μΩ-cm, high current densities and excellent thermal conductivity. These characteristics of copper are increasingly important for supporting sub-22nm lines with high device density and speed. Deposition of copper lines can be achieved by a variety of techniques. A standard method generally involves physical vapor deposition (PVD) and electrochemical deposition (ECD). Because copper diffuses into silicon, silicon dioxide, and other low k dielectric materials, which can “poison” the device, Ta/TaN films are used as copper diffusion barriers. Copper integration schemes at sub-22nm use low-k dielectric PVD Ta/TaN barrier/ PVD copper seed/ ECD-Cu material stack.

 

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