Saturday, April 26, 2014

ALD - Standard Operating Procedures for a Cambridge Nanotech reactor

As reported on Youtube by INRF - The Integrated Nanosystems Research Facility at the University of California, Irvine (INRF UCI) - here are some really good and detailed insights into how to grow Al2O3 and HfO2 by ALD using a Savannah Cambridge Nantech reactor. Their Youtube channel have additional instruction movise from their clean room that you might find interesting. Who doesn´t clean room movies!?!? :-)

Usage Policies for Cambridge Nanotech ALD System and standard policies for usage. This document provides the standard operation procedure of the Cambridge Nanotech ALD. System in the INRF cleanroom at UCI. The ALD system allows to deposit Al2O3 and HfO2 thin films atomic layer by layer onto silicon based substrate.
This tool is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than 2000:1. This system is equipped with heated precursors lines and the option to add up to six precursor lines.
View the SOP documentation or check out the great instruction movie below.

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