Thursday, December 14, 2017

Ultrahigh Elastic Strain Energy Storage in Metal-Oxide-Infiltrated Patterned Hybrid Polymer Nanocomposites

Phys.org reports: A team of scientists from the U.S. Department of Energy's Brookhaven National Laboratory and the University of Connecticut have developed a customizable nanomaterial that combines metallic strength with a foam-like ability to compress and spring back.
 
This scanning electron micrograph (SEM) image shows the nanomechanical testing tip passing over the arrays of custom-made nanopillars as it applies pressure to test elasticity and energy storage potential. The inset shows the structure of an individual hybrid nanopillar. Credit: Brookhaven National Laboratory

Read more at: https://phys.org/news/2017-12-scientists-nanoscale-pillars-memory-foam.html#jCp
This scanning electron micrograph (SEM) image shows the nanomechanical testing tip passing over the arrays of custom-made nanopillars as it applies pressure to test elasticity and energy storage potential. The inset shows the structure of an individual hybrid nanopillar. Credit: Brookhaven National Laboratory

Read more at: https://phys.org/news/2017-12-scientists-nanoscale-pillars-memory-foam.html#jCp

This scanning electron micrograph (SEM) image shows the nanomechanical testing tip passing over the arrays of custom-made nanopillars as it applies pressure to test elasticity and energy storage potential. The inset shows the structure of an individual hybrid nanopillar. Credit: Brookhaven National Laboratory

According to the supplemantary information The patterned SU-8 nanopillars were subjected to the AlOx infiltration synthesis at 85 °C using a commercial ALD system (Cambridge Nanotech Savannah S100). TMA (Sigma-Aldrich) was infiltrated into the polymer template for 5 min (vapor pressure <100 Torr), followed by N2 purging of the ALD chamber for 5 min (100 sccm). Then, water vapor was infiltrated into the polymer next for 5 min (pressure < 10 Torr), followed by N2 purging for 5 min, completing one synthesis cycle. A total of up to 16 cycles were applied.

This diagram shows the breakthrough synthesis process developed for these hybrid nanomaterials. First, electron-beam lithography carves the isolated nanopillars, then an aluminum vapor (TMA) infiltrates the pores in the structures, and finally exposure to water creates the final aluminum-oxide infused material. Credit: Brookhaven National Laboratory.

Please finde the abstract from Nanoletters below.
 
Read more at: LINK

Ultrahigh Elastic Strain Energy Storage in Metal-Oxide-Infiltrated Patterned Hybrid Polymer Nanocomposites

Nano Lett., 2017, 17 (12), pp 7416–7423
DOI: 10.1021/acs.nanolett.7b03238

Modulus of resilience, the measure of a material’s ability to store and release elastic strain energy, is critical for realizing advanced mechanical actuation technologies in micro/nanoelectromechanical systems. In general, engineering the modulus of resilience is difficult because it requires asymmetrically increasing yield strength and Young’s modulus against their mutual scaling behavior. This task becomes further challenging if it needs to be carried out at the nanometer scale. Here, we demonstrate organic–inorganic hybrid composite nanopillars with one of the highest modulus of resilience per density by utilizing vapor-phase aluminum oxide infiltration in lithographically patterned negative photoresist SU-8. In situ nanomechanical measurements reveal a metal-like high yield strength (∼500 MPa) with an unusually low, foam-like Young’s modulus (∼7 GPa), a unique pairing that yields ultrahigh modulus of resilience, reaching up to ∼24 MJ/m3 as well as exceptional modulus of resilience per density of ∼13.4 kJ/kg, surpassing those of most engineering materials. The hybrid polymer nanocomposite features lightweight, ultrahigh tunable modulus of resilience and versatile nanoscale lithographic patternability with potential for application as nanomechanical components which require ultrahigh mechanical resilience and strength.

Globalfoundrfies to use quad patterning and Cobalt contacts for 7nm

ZDNet reports: At IEDM Globalfoundries presented details of its 7nm process which promises a significant increase in density, performance and efficiency in comparison to the 14nm technology used to manufacture AMD processors, IBM Power server chips and other products. GlobalFoundries will start 7nm production using current lithography tools, though it plans to quickly move to next-generation EUV lithography to cut costs

Based on GlobalFoundries latest generation of 3D or FinFET transistors, the 7LP process has a fin pitch (the distance between the conducting channels) of 30nm, gate pitch of 56nm and a minimum metal pitch of 40nm--all of which are "significantly scaled from 14nm." GlobalFoundries said it tuned the fin shape and profile for best performance, but did not provide measurements for the width or height of the fins. The smallest high-density SRAM cell measures 0.0269 square microns.
 
Like Intel, GlobalFoundries will use self-aligned quad patterning (SAQP) to fabricate the fins, as well as double-patterning for metal layers, and has introduced cobalt metal contacts to reduce resistance.



Thursday, December 7, 2017

Picosun Oy and Ushio Inc. start collaboration in Japan

ESPOO, Finland, and TOKYO, Japan, 6th December, 2017 – Picosun Oy, a leading supplier of advanced Atomic Layer Deposition (ALD) thin film coating solutions, and Ushio Inc., a leading manufacturer of light sources and optical equipment, have started collaboration to boost the sales of Picosun’s ALD technology in the Japanese market.

Japan has long been one of Picosun’s most important market areas, where the demand for industrial ALD solutions is constantly increasing. In order to always guarantee first-class service to the esteemed customers in the area, Picosun Japan Co. Ltd was established as Picosun’s local subsidiary. Now, to extend this sales and service network even further, Picosun has decided to collaborate with Ushio, with Ushio working as its sales representative. Ushio is a well-known, well-established supplier of a wide variety of manufacturing equipment to the global semiconductor market, and Picosun’s fully automated, SEMI-compliant, and production line compatible industrial ALD systems will be a key addition to their portfolio.

Tuesday, December 5, 2017

Atomic Layer Processing for free!


Journal of Vacuum Science & Technology  is  More than Vacuum

Recent Atomic Layer Processing Articles 


Submit Your Articles on Atomic Layer Processing to JVST 
 
The following articles are free to download for next 30 days:

Quasi-atomic layer etching of silicon nitride
Sonam D. Sherpa and Alok Ranjan
J. Vac. Sci. Technol., A 35, 01A102 (2017) | Read More 
 
Predicting synergy in atomic layer etching
Keren J. Kanarik, Samantha Tan, Wenbing Yang, Taeseung Kim, Thorsten Lill, Alexander Kabansky, Eric A. Hudson, Tomihito Ohba, Kazuo Nojiri, Jengyi Yu, Rich Wise, Ivan L. Berry, Yang Pan, Jeffrey Marks, and Richard A. Gottscho
J. Vac. Sci. Technol., A 35, 05C302 (2017) |  Read More 
 
Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition
Takayoshi Tsutsumi, Hiroki Kondo, Masaru Hori, Masaru Zaitsu, Akiko Kobayashi, Toshihisa Nozawa, and Nobuyoshi Kobayashi
J. Vac. Sci. Technol., A 35, 01A103 (2017) | Read More 
 
Review Article: Plasma-surface interactions at the atomic scale for patterning metals
Nicholas D. Altieri, Jack Kun-Chieh Chen, Luke Minardi, and Jane P. Chang
J. Vac. Sci. Technol., A 35, 05C203 (2017) |  Read More 
 
Atomic layer etching in close-to-conventional plasma etch tools
Andy Goodyear and Mike Cooke
J. Vac. Sci. Technol., A 35, 01A105 (2017) |  Read More 
 
Correcting defects in area selective molecular layer deposition
Richard G. Closser, David S. Bergsman, Luis Ruelas, Fatemeh Sadat Minaye Hashemi, and Stacey F. Bent
J. Vac. Sci. Technol., A 35, 031509 (2017) | Read More 
 
Revisiting the growth mechanism of atomic layer deposition of Al2O3: A vibrational sum-frequency generation study
Vincent Vandalon and W. M. M. (Erwin) Kessels
J. Vac. Sci. Technol., A 35, 05C313 (2017) | Read More 
 
High-k oxides by atomic layer deposition-Applications in biology and medicine
Marek Godlewski, Sylwia Gierałtowska, Łukasz Wachnicki, Rafał Pietuszka, Bartłomiej S. Witkowski, Anna Słońska, Zdzisław Gajewski, and Michał M. Godlewski
J. Vac. Sci. Technol., A 35, 021508 (2017) |  Read More 
 
Atomic layer deposition of h-BN(0001) on RuO2(110)/Ru(0001)
Jessica Jones, Brock Beauclair, Opeyemi Olanipekun, Sherard Lightbourne, Mofei Zhang, Brittany Pollok, Aparna Pilli, and Jeffry Kelber
J. Vac. Sci. Technol., A 35, 01B139 (2017) |  Read More 
 
Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision
David R. Boris, Tzvetelina B. Petrova, George M. Petrov, and Scott G. Walton
J. Vac. Sci. Technol., A 35, 01A104 (2017) |  Read More 

Thursday, November 30, 2017

2nd HERALD.ECI Workshop in Barcelona March 1-2, 2018

The main objective of this 2nd HERALD.ECI Workshop with hands-on training is to
create an ignition point for competitive proposals resulting in joint, EU-funded research projects
under ECI
(early career investigator) participation or leadership.
We want the trainees to
  • gain advanced ‘theoretical’ knowledge input on how to write competitive proposals & manage EU-funded projects from an EU funding expert & Horizon 2020 coach through an impulse talk plus interactive proposal clinics.
  • find excellent, perfectly matching collaboration/ project partners during a welcome mixer.
  • exchange experiences with an excellent (female) ALD expert and with an industry partner.
  • transfer the newly gained knowledge into advanced ‘practical’ skills by
    developing joint proposal ideas,
    transitioning specific ideas into concrete proposal drafts, and
    starting to write
    together in smaller, matched collaboration/ project groups.
  • go home with a raw outline and concrete idea description, i. e. the first step of an actual proposal.

Agenda

The complete Agenda in all detail will be updated here soon.

tentative Agenda as of November 28, 2017
tentative Agenda as of November 28, 2017


Wednesday, November 29, 2017

Transparent flexible capacitors by ALD high-k, ALD AZO and graphene electrodes

Transparent and flexible flat panel displays manufactured on plastic substrates and flexible substrates involve key technologies like ALD manufacturing of transparent electrodes and barriers. In addition, for the pixel-drive circuit of displays, capacitors are used for charging and discharging at very high speed. Having a high capacitance enables also a high color brightness for each pixel. Now researchers at Wuhan University, China has developed an capacitor technology that is has an excellent transparency and flexibility using the latest ALD and graphene processing technology. Please find the Open Access publication below.

In this study used comercially available graphene in the form of single-layer graphene that had been grown by CVD on copper foil from 2D Carbon Tech Inc. LTD, Changzhou, China. The ALD ZrO2 high-k and AZO was grown in an TSF 200 from Beneq.

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes
by Tao Guo, Guozhen Zhang, Xi Su, Heng Zhang, Jiaxian Wan, Xue Chen, Hao Wu and Chang Liu
Nanomaterials 2017, 7(12), 418; doi:10.3390/nano7120418  (registering DOI) - 28 November 2017
 
 
(Left) The schematic diagram of the ultrathin, transparent and flexible capacitors; (Right) The optical transmittance spectra of the capacitors on PEN substrates. The inset shows the optical photograph of the actual capacitor device with the characters “TFS 200” in the background, and the optical transmittance spectra of graphene and capacitors on quartz substrates. 
 
Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN) substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD). The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO) films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz) and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V). Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits. Full article

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Picosun provide ALD Cluster Tool to Swedish MEMS Foundry Silex Microsystems

ESPOO, Finland, 29th November, 2017 – Picosun Oy (Finland), Silex Microsystems AB (Sweden), and Pegasus Chemicals Ltd (UK) have joined forces to develop and provide novel ALD (Atomic Layer Deposition) solutions and processes for MEMS (MicroElectroMechanical Systems) industries. The aim of the collaboration is to realize emerging, advanced MEMS structures that would not be possible to manufacture by any other thin film deposition methods.


Today, MEMS are crucial components in several everyday applications such as mobile phones, cars and in various sensor systems. In addition to these already vast markets, the rapidly spreading Internet-of-Things with its billions of independently communicating electronic devices is a huge driving force to accelerate MEMS industry’s exponential growth in the very near future. 
 

This is Silex Microsystems (Promotion Viedo from Youtube)
 
In the Picosun-Silex-Pegasus collaboration, a PICOSUN™ ALD cluster platform is installed at Silex’s MEMS foundry in Järfälla, Sweden. The platform consists of a fully automated, factory integrated cassette-to-cassette vacuum robot for substrate handling and a PICOSUN™ P-300F ALD reactor capable of coating up to 25 pcs 8” wafers in a batch. The installed reactor can deposit various metal oxides, metal nitrides, and pure metals on up to tens of thousands of wafers per month (*). Pegasus develops and manufactures the precursor chemicals required for the ALD processes and provides the technical support and delivery options for individual applications. The cluster platform can be later upgraded with two additional ALD reactors. In the collaboration, engineers and scientists from all three partners work together to solve existing problems in MEMS processing, as well as to develop completely new openings on how to realize novel MEMS devices.

“We have been working with Picosun since 2010 and now with this project we can bring our collaboration to a completely new level. We are very excited to have the PICOSUN™ ALD cluster platform in our cleanroom. It enables us to develop novel, production-proven ALD solutions for our customers in advanced MEMS applications,” says Dr. Niklas Svedin, Vice President of Engineering at Silex Microsystems. 
“This is a valuable project for us, as the use of ALD in MEMS processing is increasing very fast. We have already strong presence in the MEMS market, but new applications come up weekly and we want to keep our spearheading position in this development. Now in the SALADIN project we have partners with whom we can also test and develop new ideas of our own how ALD could be implemented in the MEMS process flow,” continues Mr. Juhana Kostamo, Managing Director of Picosun. 
 
“The MEMS industry is a fast-growing market and it is very interesting for us to be involved in the process of introducing the groundbreaking ALD cluster platform to it. We are eager to be in the frontline of the chemical development for this field and focusing on advanced MEMS applications,” summarises Dr. Paul Williams, Technical Director of Pegasus Chemicals. 
 
Picosun Oy (LINK)
Silex Microsystems (LINK)  
Pegasus Chemicals (LINK)

(*) Throughput calculated for 10 nm Al2O3, 90% system uptime.

Saturday, November 25, 2017

The 7nm race by TSMC and Samsung - EUV or not EUV

According to industry sources on October 19, Samsung Electronics is considering a plan to purchase 10 extreme ultraviolet (EUV) lithography tools from the Netherlands-based ASML, the biggest semiconductor equipment maker in the world. To put tha in perspective - ASML believes that it can produce about 12 EUV lithography tools this year. It is the only company that manufactures EUV lithography tools in the world.

Sales in ALD and Etch equipment have been boosted by multiple patterning technologies based on Immersion lithography, both for Logic/Foundry and Memory. Maybe as much as 1/3 of the single/multi wafer ALD equipment market is patterning related. The last two years or so analyst have been busy trying to figure out the impact on deposition and etch equipment sales if/when EUV is introduced. Here is a recent take down by Seeking Alpha (LINK). My view is that scaling is based on symbiotic use of the latest technologies and multiple patterning and EUV will co-exist and keeping the scaling path alive. In addition, scaling opens new opportunities for ALD, ALEtch and future use of selective growth technologies with atomic scale precision. According to recent reports the ALEtch market segment is now considerd an actual segment by itself and has entered HVM (LINK).
Fudzilla reports: Korean based ETNews has mentioned that Qualcomm 7nm manufacturing has been a big win for TSMC while two other US and China customers chose Samsung’s 7nm. TSMC traditionially have dibs on Nvidia and MediaTek according to the report.

Qualcomm and Broadcom, according to the report are designing their next generation chips with TSMC’s7-nano PDK. The reason why Qualcomm went with 7nm with TSMC is the fact that the fab uses normal steppers while Samsung wants to make its 7nm with more bold and riskier EUV (Extreme Ultraviolet) photolithography technology.

View of Samsung Electronics’ Hwasung 17 line. It is expected that Samsung Electronics will build a new 7-nano plant on a nearby site according to ETNews.

Samsung is expected to be later to the 7nm game and early adopters had to go with TSMC. EUV is still technology that is not entirely ready for the mass market and there is a disagreement weather you should need to use Extreme Ultraviolet light manufacturing with 7nm or first with 5nm. Obviously the two main fabs disagree while GlobalFoundries cooperates and shares technology with Samsung, and will have Samsung to rely upon for 7nm.

Full article: Qualcomm 7nm made by TSMC [LINK]
ETNews original source: Samsung Electronics Close to Securing Two New Customers for Its 7-Nano Foundry[LINK]
Business Korea: Keeping Leadership in 7-nano Era Samsung Electronics Seeks to Buy Up Next-gen Semiconductor Mfg Equipment

Monday, November 20, 2017

ALD assisted Nano-Architected capacitors

Nanotechweb.org reports: Researchers at Gwangju Institute of Science and Technology (GIST) Korea and California Institute of Technology USA have made low-k dielectric by a new technique. They deposit a photoresist on the top of a electrode (Au/Ti (80/12 nm) and then directly write a nanolattice scaffold into the photoresist layer using a technique called two-photon photolithography direct laser writing. 

They then coat coated the polymer nanolattice with a 10 nm-thick conformal layer of alumina (Al2O3) using atomic layer deposition (ALD) and etch away the photoresist by an oxygen plasma using a focused ion beam. Finally, we evaporated an identical Au/Ti (80/12 nm) bilayer as a top electrode on the top plate of the nanolattice to create a parallel plate capacitor.

Please find much more details in this Nanotechweb.org article (LINK) and the publication below:

Enabling Simultaneous Extreme Ultra Low-k in Stiff, Resilient, and Thermally Stable Nano-Architected Materials 

Max L. Lifson, Min-Woo Kim, Julia R. Greer, and Bong-Joong Kim
Nano Lett., Article ASAP
DOI: 10.1021/acs.nanolett.7b03941 
Publication Date (Web): November 7, 2017

Abstract Image

Low dielectric constant (low-k) materials have gained increasing popularity because of their critical role in developing faster, smaller, and higher performance devices. Their practical use has been limited by the strong coupling among mechanical, thermal, and electrical properties of materials and their dielectric constant; a low-k is usually attained by materials that are very porous, which results in high compliance, that is, silica aerogels; high dielectric loss, that is, porous polycrystalline alumina; and poor thermal stability, that is, Sr-based metal–organic frameworks. We report the fabrication of 3D nanoarchitected hollow-beam alumina dielectrics which k is 1.06–1.10 at 1 MHz that is stable over the voltage range of −20 to 20 V and a frequency range of 100 kHz to 10 MHz. This dielectric material can be used in capacitors and is mechanically resilient, with a Young’s modulus of 30 MPa, a yield strength of 1.07 MPa, a nearly full shape recoverability to its original size after >50% compressions, and outstanding thermal stability with a thermal coefficient of dielectric constant (TCK) of 2.43 × 10–5 K–1 up to 800 °C. These results suggest that nanoarchitected materials may serve as viable candidates for ultra low-k materials that are simultaneously mechanically resilient and thermally and electrically stable for microelectronics and devices.

Annual High-k Workshop 2018 goes on excursion to Wroclaw Poland

This coming year the classic Dresden NaMLab annual High-k Workshop 2018 organized by Dr. Uwe Schröder (ALD2012, Co-Chair) will make an excursion to Wroclaw Poland. The webpage just came online so please check it out for further details on the event.

Conference "High-k oxides by ALD"

Hotel Jasek Premium, Wrocław, Poland, March 7th - 10th, 2018 

In collaboration with the EU COST networking project HerALD, Institute of Physics, Polish Academy of Sciences and Polish Vacuum Society invite you to the next edition of the conference "High-k oxides by ALD", which will be held in Wroclaw, Poland, on March 7-10, 2018. New challenges offered by the application of ALD based high-k dielectric materials in nanotechnology will be discussed by more than 80 participants from industry, research institutes and universities.

The conference is continuation of NaMLab workshops - a stimulating European platform for application-oriented scientists to exchange ideas and discuss latest experimental results on process technology, new results in the field of ALD-grown dielectrics for solar cells, transparent conduction oxides (TCOs), and for silicon based micro- and nano-electronics. The 2018 edition is organized in Poland to increase integration between Eastern and Western Europe countries. 


Beautiful Ostrów Tumski ("Cathedral Island", German: Dominsel) is the oldest part of the city of Wrocław in south-western Poland. It was formerly an island (ostrów in Old Polish language) between branches of the Oder River [Wikipedia].

Sunday, November 19, 2017

Atomic Layer Etching is entering HVM for sub 14 nm Logic

After years in R&D, several fab tool vendors last year finally began to ship systems based a next-generation technology called atomic layer etch (ALE).

ALE is is moving into 16/14nm, but it will play a big role at 10/7nm and beyond. The industry also is working on the next wave of ALE technology for advanced logic and memory production.

Used by chipmakers for years, traditional etch systems remove materials on a continuous basis in devices. Considered a next-generation etch technology, ALE selectively removes targeted materials at the atomic scale without damaging other parts of the structure. For example, ALE can be used to remove materials in a structure to form trenches with gaps on the order of 10 to 15 angstroms or 5 atoms wide. (An angstrom is 0.1nm.)

Applied Materials Centris Sym3 is one of the Applied Materials offering for ALE. It can be configured to handle plasma ALE for anisotropic etch applications, such as self-align contacts and spacer-based patterning.

Applied Materials, Hitachi High-Technologies, Lam Research and TEL are among the suppliers of ALE tools in the market. Today, ALE represents a tiny percentage of the overall etch market. In total, the worldwide dry etch business is projected to reach $9.6 billion in 2017, up from $7.2 billion in 2016, according to Gartner.

Full article :  "What’s Next For Atomic Layer Etch?" by Mark Lapedus, Semiconductor Engineering (LINK)





Saturday, November 18, 2017

Aixtron complete sale of ALD/CVD memory product line to Eugene Technology

AIXTRON SE (FSE: AIXA), one of the world’s leading providers of deposition equipment to the semiconductor industry, announced today that the sale of AIXTRON’s ALD and CVD memory product line to Eugene Technology Inc., a wholly owned U.S. subsidiary of Eugene Technology Co., Ltd, South Korea was completed as of November 15, 2017. 

The QXP-8300 Atomic Layer Deposition (ALD) mini-batch system suitable for e.g. high-k oxide films in advanced memory applications including 3D structure devices (aixtron.com)

AIXTRON will receive c. USD 60 million for the assets being transferred and c. USD 11 million for open supplier orders for which it retains the liability to pay.

AIXTRON, Inc., the U.S. subsidiary of AIXTRON SE situated in Santa Clara, California, will continue to provide sales and support for its continuing businesses.

Arradiance and InRedox team up to offer ALD Functionalized Nanomaterials

SUDBURY, Mass., Nov. 17, 2017 —Arradiance’s formidable Atomic Layer Deposition (ALD) foundry service and InRedox’s world-class manufacturing of nanoporous anodic aluminum oxide (AAO) and nanotubular anodic titanium oxide (ATO) will provide new ALD-functionalized Nanoceramics for life sciences, nanotechnology, filtration and separation, energy generation and storage, analytical equipment and many other applications.
 

Arradiance LLC, manufacturer of the popular GEMStar family of professional, research grade Atomic Layer Deposition (ALD) systems and provider of nanofilm foundry services, today announced a partnership with InRedox LLC (Longmont, Colorado) to provide nanotechnology researchers with ALD-functionalized nanostructured materials (wafers, membranes and nanotemplates).

“InRedox’s innovative AAO / ATO wafers and templates have demonstrated utility at leading commercial, academic and government research institutions across a broad range of technology areas,” said Arradiance CEO Michael Trotter. “I am certain that the combination of Arradiance’s ALD nanofilms with InRedox’s powerful nanofabrication technology platform will spur exciting new developments,” explained Mr. Trotter.

“InRedox is excited by the potential of ALD functionalized nanoporous ceramics,” stated Dmitri Routkevitch, InRedox President and CTO, “and we look forward to working with Arradiance to continue to expand the range of nanomaterials that inspire and enable our customers in their pursuit of scientific breakthroughs or new products.”