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The Electrochemical Society (ECS) conference is an international event running every spring and fall, and gathering 2000-4000 participants and 30-40 exhibitors both from academia and industry.
The conference has a strong focus on emerging technology and applications in both electrochemistry and solid-state science & technology.
This fall the event will be held as 244th ECS Meeting on Oct. 8-12, 2023 in Gothenburg (Sweden).
The full program as well as information on travel assistance for students can be found on https://www.electrochem.org/
The organizers of symposium G01 on “Atomic Layer Deposition & Etching Applications, 19” encourage you to submit your abstracts on the following (and closely related) topics:
1. Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;
2. Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;
3. Interconnects and contacts: integration of ALD films with Cu and low-k materials;
4. Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;
5. New precursors and delivery systems;
6. Optical and photonic applications;
7. Coating of nanoporous materials by ALD;
8. MLD and hybrid ALD/MLD;
9. ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;
10. ALD for energy storage applications;
11. Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;
12. Area-selective ALD;
13. Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.
Abstract submission
Meeting abstracts should be submitted not later than the deadline of April 21, 2023 via the ECS website: Abstract submission instruction
List of invited speakers
· Johan Swerts, (Imec, Belgium) KEYNOTE: ALD challenges and opportunities in the light of future trends in electronics
· Stephan Wege (Plasway Technology, Germany), Reactor design for combined ALD & ALE
· Masanobu Honda (TEL, Japan), Novel surface reactions in low-temperature plasma etching
· Barbara Hughes, (Forge Nano, USA), Dual Coatings, Triple the Benefit; Atomic Armor for Better Battery Performance
· Juhani Taskinen, (Applied Materials-Picosun, Finland), ALD for biomedicine
· Alex Kozen (Univ. of Maryland, USA), ALD for improved Lithium Ion Batteries
· Malachi Noked (Bar-Ilan Univ., Israel), ALD/MLD for batteries
· Yong Qin (Chinese Academy of Sciences), ALD for catalysis
· Jan Macák, (Univ. of Pardubice, Czechia), ALD on nanotubular materials and applications
· Bora Karasulu, Univ. of Warwick, UK), Atomistic Insights into Continuous and Area-Selective ALD Processes: First-principles Simulations of the Underpinning Surface Chemistry
· Ageeth Bol (Univ. Michigan, USA), ALD on 2D materials
· Pieter-Jan Wyndaele (KU Leuven-imec, Belgium), Enabling high-quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template
· Elton Graugnard (Boise State Univ., USA), Atomic Layer Processing of MoS2
· Han-Bo-Ram Lee (Incheon National Univ., Korea), Area-Selective Deposition using Homometallic Precursor Inhibitors
· Ralf Tonner (Univ. Leipzig, Germany), Ab initio approaches to area-selective deposition
· Nick Chittock (TU Eindhoven, Netherlands), Utilizing plasmas for isotropic Atomic Layer Etching
· Heeyeop Chae (Sungkyunkwan Univ., Korea), Plasma-enhanced Atomic Layer Etching for Metals and Dielectric Materials
· Charles Winter (Wayne State Univ., USA), New Precursors and Processes for the Thermal ALD of Metal Thin Films
· Anjana Devi, Ruhr Univ. Bochum, Germany), Novel precursors dedicated for Atomic Layer Processing
Visa and travel
For more information, see: www.electrochem.org/244/visa-
In addition, Mrs. Francesca Spagnuolo at the ECS (Francesca.Spagnuolo@
We are looking forward to meeting you in Gothenburg !
