Silicon Carbide Empowers Power Semiconductors in Thriving Industry Transition

A paradigm shift is sweeping the power semiconductor landscape, with silicon carbide (SiC) emerging as the frontrunner. Driven by EV adoption and cost parity with silicon, SiC's ascendancy is reshaping the market. Thousands of SiC-based power semiconductor modules are already enhancing EV functions such as charging and conversion. SiC MOSFETs are supplanting silicon-based IGBTs, doubling power density and ramping switching speeds while downsizing form factors. This transformation hinges on SiC modules achieving price parity with silicon alternatives, fostering supply alliances and new SiC fabs. SiC modules play a pivotal role in the transition to 800V batteries, boosting EV adoption through faster charging and reduced costs. Despite challenges, analysts anticipate substantial SiC growth, particularly in automotive applications. This evolutionary journey towards energy-efficient power is projected to culminate in a $6.3 billion SiC power semiconductor market by 2027. 

In the pursuit of advancing silicon carbide (SiC) technology, a suite of innovative wafer process tools is being employed. These tools encompass high-temperature epitaxial growth exceeding 2,000°C, hot ion implantation, rapid thermal processing (RTP), and Atomic Layer Deposition (ALD). Noteworthy adaptations are underway in wafer grinding, chemical-mechanical polishing (CMP), as well as the formulation of abrasion-resistant polishing pads and slurries tailored for the rigid, fragile SiC substrate. The evolution also encompasses novel materials like strippers and cleaning formulations, addressing device requirements and sustainability considerations. These cutting-edge processes collectively exemplify the industry's determination to optimize SiC production, enhance its characteristics, and foster its integration into diverse applications, from electric vehicles to renewable energy systems.

Power Semis Usher In The Silicon Carbide Era (semiengineering.com)