[RASIRC Technical Brief] Silicon and metal nitrides are extensively used in the semiconductor industry in logic and memory chip manufacturing. PEALD approaches have found success in this area but carry significant risk of poor step coverage and surface damage in 3D and HAR structures. When non-line-of-sight deposition is required, thermal ALD is the preferred solution along with co-reactants that can deposit high quality films at temperatures below 430°C.
Source: RASIRC Technical Brief (LINK)
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