Saturday, July 30, 2016

Wayne State presented new ALD chemistries for low temperature tantalum and selective cobalt at ALD2016

Prof. Chuck Winter and his team at Wayne State presented new ALD chemistries for low temperature tantalum and selective cobalt at ALD 2016 Ireland this week. Both processes are very important for todays scaling of logic and memory technologies. Metallic tantalum can be used in workfunction engineering of HKMG high performance FinFET transitors as well as for Cu seed/barrier technology in BEOL. Cobalt is as tantantlum an option for Cu barrier/seed and also used selectivly to cap the Cu lines and vias from oxidising and reducing RC performance.


The best highlight talk went to Marissa Kerrigan from Wayne State as voted by attendees on novel Co recursor chemistry for selective Cobalt (Left Marissa Kerrigan, right Simon Elliott, photo by ALD2016.com).

“This opens up the prospect of using tantalum in layers just a few nanometers thick as the liner for interconnect wiring in the complex geometries of next-generation electronic chips,” said the University, which worked with German chemicals giant BASF on the project accoring to Electronic Weekly.

Marissa Kerrigan also from Wayne State announced novel ALD chemistry for metallic cobalt that showed excellent selectivity to copper (photo by ALD2016.com).

“The Wayne State processes for tantalum and cobalt are significant steps forward in controlled growth of ultra-thin metals,” said conference chair, Dr Simon Elliott of Ireland’s Tyndall National Institute. “Strong growth is projected for area-selective deposition: in the near future, it will allow higher-precision patterning of semiconductor chips, and in the longer term it will be an enabler for manufacturing nano-structured materials on demand.” according to the same article in Electronics Weekly.