Samsung breakthru in wafer-scale growth of graphene

Samsung Advanced Institute of Technology and Sungkyunkwan University, publish results on wafer-scale growth of single-crystal monolayer graphene in Science. 

 

 

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

Published Online April 3 2014, Science DOI: 10.1126/science.1252268

The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.

More on this story at Extrem Tech: http://www.extremetech.com/extreme/179874-samsungs-graphene-breakthrough-could-finally-put-the-wonder-material-into-real-world-devices