From left to right: Angel Yanguas-Gil, Martin Magnusson, Stacey Bent, Claire Carmalt, Annelies Delabie, and Nicolas Blasco.
Invited speakers:
"Growth under the influence of chemistry: understanding the evolution of microstructure and the emergence of crystallinity during the early stages of growth"Abstract
Angel Yanguas-Gil
Argonne National Laboratories, USA
"Aerotaxy: an efficient aerosol-based method for growth of device quality semiconductor nanowires"
Abstract
Martin Magnusson
Lund university, Sweden
"Topographical and area selectivity in atomic layer deposition"
Abstract
Stacey Bent
Stanford University, USA
"AACVD of metal oxides: from precursor synthesis to TCOs and photocatalysts"
Abstract
Claire Carmalt
University College London, UK
"Nucleation mechanisms for Chemical Vapor Deposition and Atomic Layer Deposition of 2D semiconductor materials"
Abstract
Annelies Delabie
Imec, Belgium
"Extending ALD adoption in Sub-14nm Nodes, and Beyond Semiconductors, Through Precursors Innovation"
Abstract
Nicolas Blasco
Air Liquide, France
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