Substrate selectivity in the low temperature ALD of cobalt metal films

Cobalt metal films have increasing importance as magnetic materials, precursors to CoSi2 contacts, liners and encapsulation of copper vias an lines in interconetc, and possibly even as copper replacement conductors know as Cobalt fill. Here Wayne State, UT Dallas and former SAFC HiTech now EMD Performance Materials of MERCK publish an important paper on selective Co ALD at low temperature using bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic.

Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid
The Journal of Chemical Physics 146, 052813 (2017); doi: http://dx.doi.org/10.1063/1.4968848

Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films.. @waynestate #Chemistry https://t.co/emmPRq6SyA pic.twitter.com/d9UnUfVmxn

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