Germanium outperforms silicon in energy efficient gate all around NW transistors

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology have demonstrated the world-wide first transistor based on germanium that can be programmed between electron- (n) and hole- (p) conduction.

Full story: LINK

The publication can be found online under:
http://pubs.acs.org/doi/abs/10.1021/acsnano.6b07531

 

Breakthrough at #NaMLab #cfaed: Germanium outperforms silicon in energy efficient transistors w/ n- & p- conduction: https://t.co/k1uOKEKQr7 pic.twitter.com/ML7Up4D3Gl

— cfaed | TU Dresden (@cfaed_TUD) February 3, 2017