Thursday, February 9, 2017

One atomic layer has been deposited by ALD on graphene at UNIST

EUREKALERT! reports: ULSAN, South Korea--A new study, affiliated with UNIST has introduced a novel method for fabrication of world's thinnest oxide semiconductor that is just one atom thick. This may open up new possibilities for thin, transparent, and flexible electronic devices, such as ultra-small sensors.

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