Thursday, June 2, 2016

Speaker & Abstracts for Atomic Layer Etching 2016 Workshop in Dublin

Now the complete program for the ALE 2016 Workshop that runs in parallel to ALD2016 in Dublin has been released. Plead find the programme and links to abstract below.



Monday 25 July, Monday 25 July

Thermal ALE

10:45-12:15
Liffey Hall 1
Workshop: Thermal ALE
Chair: to be confirmed
O17 Developments in Thermal Atomic Layer Etching Using Sequential, Self-limiting Reactions
Steven George*, Younghee Lee, Jaime DuMont, Nicholas Johnson, Amy Marquardt
University of Colorado, USA
10:45-11:15
O18 Isotropic atomic layer etching of silicon nitride for 3D device applications
Kazunori Shinoda*1, Nobuya Miyoshi1, Hiroyuki Kobayashi1, Masaru Kurihara1, Tadamitsu Kanekiyo2, Masaru Izawa2, Kenji Ishikawa3, Masaru Hori3
1Hitachi, Japan, 2Hitachi High-Technologies, Japan, 3Nagoya University, Japan
11:15-11:45
O19 Low-Temperature Selective Tungsten Hexafluoride Chemical Vapor Etching of TiO2 Films
Paul Lemaire*, Gregory Parsons
North Carolina State University, USA
11:45-12:00
O20 A two-step atomic layer etching process on MoS2 realized by remote O2 plasma
Hui Zhu, Xiaoye Qin, Lanxia Cheng, ANgelica Azcatl, Jiyoung Kim, Robert Wallace*
University of Texas at Dallas, USA
12:00-12:15



Non-traditional ALE approaches

13:45-15:15
Liffey Hall 1
Workshop: Non-traditional ALE approaches
Chair: to be confirmed
O32 Longitudinal nanowire splitting by atomic layer etching
DMITRY B. SUYATIN*, MD SABBIR AHMED KHAN, JONAS SUNDQVIST, ANDERS KVENNEFORS, MARIUSZ GRACZYK, NICKLAS NILSSON, IVAN MAXIMOV
Lund University, Sweden
13:45-14:00
O33 A novel atomic layer etching of SiO2 with alternating O2 plasma with fluorocarbon film deposition
Takayoshi Tsutsumi*1, Masaru Zaitsu2, Akiko Kobayashi2, Hiroki Kondo1, Toshihisa Nozawa2, Nobuyoshi Kobayashi2, Masaru Hori1
1Nagoya University, Japan, 2ASM Japan K. K., Japan
14:00-14:15
O34 Towards wet-chemical atomic layer etching of III-V and Ge for N7 and N5 technology nodes
Dennis H. van Dorp*, Sophia Arnauts, David Weinberger, Farid Sebaai, Niamh Waldron, Frank Holsteyns
Imec, Belgium
14:15-14:45
O35 Accelerated Neutral Atom Beam Procssing for Atomic Level Etch
Craig Huffman*1, Francis Goodwin1, Satyavolu Papa Rao1, Brendan O'Brien1, Edward Barth1,4, Saikumar Vivekanand3, Martin Rodgers3, Sean Kirkpatrick2, Michael Walsh2,4, Richard Svrluga2,4
1SUNYPoly SEMATECH, USA, 2Exogenisis Corporation, USA, 3CNSE SUNYPoly, USA, 4Neutral Physics Corporation, USA
14:45-15:00
O36 InGaAs Atomic Layer Etching
Jinwoo Park*, Geunyoung Yeom
Sungkyunkwan University, Republic of Korea
15:00-15:15


Advances in applications and hardware of ALE

15:45-17:15
Liffey Hall 1
Workshop: Advances in applications and hardware of ALE
Chair: to be confirmed
O48 Plasma source configuration impact on surface processes for high precision etch
Akira Koshiishi*1, Alok Ranjan2, Peter Ventzek3
1Tokyo Electron Miyagi Ltd., Japan, 2TEL Technology Center, America, LLC, USA, 3Tokyo Electron America, Inc., USA
15:45-16:15
O49 Electron Beam Generated Plasmas: An ultra low Te route toward ALEt
David Boris*, George Petrov, Tzvetelina Petrova, Scott Walton
U.S. Naval Research Laboratory, USA
16:15-16:30
O50 Investigating the role of neutral transport in ALE and RIE processes using a 3-dimensional Monte Carlo Feature Profile Model
Chad M. Huard*1, Mark J. Kushner1, Yiting Zhang2, Saravanapriyan Sriraman2, Alex Paterson2
1University of Michigan, USA, 2Lam Research Corp., USA
16:30-16:45
O51 Atomic layer processing by conventional and low electron temperature plasma sources: a feasibility study
Hiroyuki Miyazoe*1, Ashish Jagtiani1, Josephine Chang1, Demon Farmer1, Michael Engel1, Deborah Neumayer1, Shu-Jen Han1, Sebastian Engelmann1, David Boris2, Sandora Hernández2, Evgeniya Lock2, Scott Walton2, Eric Joseph0
1IBM TJ Watson Research Center, USA, 2Naval Research Laboratory, USA
16:45-17:00
O52 Atomic Layer Etching of Silicon Nitride using Hydrofluorocarbon Chemistry
Yohei Ishii*, Kazumasa Okuma, Tiffany Saldana, Nobuyuki Negishi, Jim Manos
Hitachi High Technologies America, Inc., USA
17:00-17:15