Researchers at Case Western Reserve University directly photo-charged lithium batteries with 7.8 percent efficiency

As reported bu Phys.org : Researchers at Case Western Reserve University, however, have wired four perovskite solar cells (PSC) in series to enhance the voltage and directly photo-charged lithium batteries (LIB) with 7.8 percent efficiency—the most efficient reported to date, the researchers believe.

The research, published in the Aug. 27 issue of Nature Communications, holds promise for cleaner transportation, home power sources and more.

Efficiently photo-charging lithium-ion battery by perovskite solar cell [Open Access]

Jiantie Xu, Yonghua Chen & Liming Dai Nature Communications 6, Article number:8103 doi:10.1038/ncomms9103

 Schematic diagram of the fabricated system of PSC–LIB. (Nature Communications 6, Article number:8103)

Abstract:  Electric vehicles using lithium-ion battery pack(s) for propulsion have recently attracted a great deal of interest. The large-scale practical application of battery electric vehicles may not be realized unless lithium-ion batteries with self-charging suppliers will be developed. Solar cells offer an attractive option for directly photo-charging lithium-ion batteries. Here we demonstrate the use of perovskite solar cell packs with four single CH3NH3PbI3 based solar cells connected in series for directly photo-charging lithium-ion batteries assembled with a LiFePO4 cathode and a Li4Ti5O12 anode. Our device shows a high overall photo-electric conversion and storage efficiency of 7.80% and excellent cycling stability, which outperforms other reported lithium-ion batteries, lithium–air batteries, flow batteries and super-capacitors integrated with a photo-charging component. The newly developed self-chargeable units based on integrated perovskite solar cells and lithium-ion batteries hold promise for various potential applications.

The structure and the preparation procedures of CH3NH3PbI3 perovskite films (Supplementary information)

ЗАО «НПО СЕРНИЯ» приглашает посетить международный семинар «Atomic Layer Deposition Russia 2015 (ALD Russia 2015)»

[JSC "NPO sulfuric" invites you to visit the international seminar «Atomic Layer Deposition Russia 2015 (ALD Russia in 2015)"]

Вам интересны передовые разработки в области ALD? ЗАО «НПО СЕРНИЯ» приглашает посетить международный семинар «Atomic Layer Deposition Russia 2015 (ALD Russia 2015)», который пройдет в городе Долгопрудном 21-23 сентября, МФТИ.

Атомно-слоевое осаждение (ALD) представляет собой метод нанесения пленочных покрытий. Это мощный инструмент для изготовления ультратонких, высокооднородных и конформных слоев для применения в полупроводниковой промышленности для производства интегральных микросхем, датчиков, микро/наноэлектромеханических систем (MЭMS / НЭМС), для производства оптики, оптоэлектроники, солнечных батарей, биосовместимых покрытий для медицинских устройств, и т.д. Подробнее о применении метода ALD>>

Хотя российские (советские) ученые сыграли значительную роль в развитии научных принципов данного метода в 1960-е годы, до недавнего времени технология ALD не в полной мере применялась в России. Таким образом, целью Международного семинара ALD-2015 является консолидация быстро растущего ALD-сообщества в России и ознакомление российских исследователей с новыми разработками ведущих международных экспертов в этой области. Подробнее о конференции ALD Russia 2015>>

HERALD website with member profiles is going live www.european-ald.net

Check out the new HERALD website with member profiles just went live www.european-ald.net

HERALD promotes European research activity in Atomic Layer Deposition (ALD)

HERALD (COST action MP1402) aims to structure and integrate European research activity in atomic layer deposition (ALD), bringing together existing groups, promoting young scientists and reaching out to industry and the public. ALD is a unique technique for growing ultra-thin films that is enabling new developments in high-tech manufacturing sectors such as electronics, energy and coatings. With interest growing worldwide, the time is right to coordinate European activity in this field. HERALD supports collaboration through lab visits, workshops and training schools.

Low temperatture ALD of Copper by Peking University

Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Zheng Guo, Hao Li, Qiang Chen, Lijun Sang, Lizhen Yang, Zhongwei Liu, and Xinwei Wang

Chem. Mater., Article ASAP
DOI: 10.1021/acs.chemmater.5b02137

 

Agglomeration is a critical issue for depositing copper (Cu) thin films, and therefore, the deposition should be preferably performed below 100 °C. This work explores an atomic layer deposition (ALD) process for copper thin films deposited at temperature as low as 50 °C. The process employs copper(I)-N,N′-diisopropylacetamidinate precursor and H2 plasma, which are both highly reactive at low temperature. The deposition process below 100 °C follows an ideal self-limiting ALD fashion with a saturated growth rate of 0.071 nm/cycle. Benefitting from the low process temperature, the agglomeration of Cu thin films is largely suppressed, and the Cu films deposited at 50 °C are pure, continuous, smooth, and highly conformal, with the resistivity comparable to PVD Cu films. In-situ reaction mechanism studies by using quartz crystal microbalance and optical emission spectroscopy are followed, and the results confirm the high reactivity of the Cu amidinate precursor at low temperature. To the best of our knowledge, this is the first successful implementation of metal amidinate precursors for low-temperature (∼50 °C) ALD process. The strategy of using metal amidinate precursors in combination with highly reactive H2 plasma is believed to be extendable for the depositions of other pure metals at low temperature.

JVSTA Issue on ALD Deadline Extended to: Septemeber 5, 2015

Special Issue on Atomic Layer Deposition

JVST A is Soliciting Research Articles for Publication in a Special January/February 2016 Issue on Atomic Layer Deposition Submission Deadline Extended to: Septemeber 5, 2015 This special issue is planned in collaboration with the 15th International Conference on Atomic Layer Deposition (ALD 2015) to be held in Portland, Oregon during June 28-July 1, 2015. The Special Issue will be dedicated to the science and technology of atomic layer controlled deposition of thin films. While a significant fraction of the articles are expected to be based on material presented at ALD 2015, research articles that are on ALD but were not presented at this conference are also welcome: the special issue will be open to all articles on the science and technology of ALD. Papers will be reviewed using the same criteria as regular JVST articles and must meet JVST standards for both technical content and written English. To be published in JVST, the manuscript must:   (1)   present original findings, conclusions or analysis that have not been published previously (2)   be free of errors and ambiguities, (3)   support conclusions with data and analysis, (4)   written clearly, and (5)   have high impact in its field.

Manuscript Deadline: September 5 , 2015     Click Here to Submit    Article Guidelines & Templates In preparing your article, you should follow the online instructions for contributors. Authors are encouraged to use the JVST templates. The easiest way to prepare your manuscript is to use the available JVST Article Template to delete and replace text as necessary.  This file and the template used to create it are available at the site above.  Online, you will have an opportunity to tell us that your paper is a part of the special issue by choosing "ALD Special Issue." Acceptable manuscript file types are MSWord, LaTeX, and PDF. For the initial submission/review process, a single PDF or MSWord file including the figures is sufficient. However, once a paper is accepted, MSWord or TeX file of the text, any tables and the list of figure captions along with the separate figure files will be required for final production. Use of color in Figures is encouraged. Your FIGURES CAN APPEAR ONLINE IN COLOR FOR FREE. Prepare illustrations in the final published size, not oversized or undersized. For any other details about manuscript preparation, please refer to the JVST A online instructions.

ALD Lab Dresden sends away Varun Sharma to Helsinki, Finland

ALD Lab Dresden, Institut für Halbleiter- ind Mikrosystemtechnik at TU Dresden takes farewell and sends away Varun Sharma to Helsinki, Finland to learn from the masters how to ALD. Please take good care of Varun for us because he too was born to ALD. (Varun Sharma, Christoph Hossbach, Jonas Sundqvist, Martin Knaut)

ALD and VTT in Finland mentioned in report on the Global Packaging Coatings Market, 2015

Crazy day first a call on non-semi applications with a dear old friend and then multiple reports popping up on the same topic. Yeah I know I once owned a Citroen and since then I see them all the time. Anyhow, here is another non-semi ALD future where ALD and VTT in Finland mentioned in report on the Global Packaging Coatings Market, 2015. However a CAGR of 4.2% is not that much to hang in the christmas tree as we say in Sweden compared to many reports saying ALD growth is above CAGR 30%. But then again ALD can for sure grow at high speed within a large market!

Research and Markets (http://www.researchandmarkets.com/research/qk7q2n/global_packaging) has announced the addition of the "Global Packaging Coatings Market 2015-2019" report to their offering.

The increase in consumer preference for eco-friendly products is an important trend being witnessed in the global packaging coatings market. The manufacturers of packaging coatings, which include beverage packaging and food packaging, and are developing new and eco-friendly coatings to comply with regulations and to meet the increasing demand for sustainable products that do not harm the ecosystem. 

This in turn is expected to propel the growth of the market during the forecast period. The VTT technical research center has developed technology for recyclable and eco-friendly packaging coatings solutions. These coatings help in the manufacture of thin, lightweight, fully recyclable, and air-tight packaging materials. They use the atomic layer deposition (ALD) method, which are helpful in food and pharmaceutical packaging as they have a good gas permeation resistance. Moreover, these recyclable coatings do not use barrier materials such as aluminum film, thereby using less raw materials compared to traditional packaging coatings materials.

According to the report, the global packaging coatings market to grow at a CAGR of 4.2% over the period 2014-2019. The growth of the global packaging industry is a major driving factor in the growth of the global packaging coatings market. The packaging industry is expected to grow by 2018. The growth will be characterized by the growing demand for packaging coatings from the packaging industry because of the increased demand for plastic packaging from the food and beverage industry.

Suppliers of raw materials determine the prices of raw materials, which in turn has a negative impact on the growth of the packaging market, thereby increasing the price of packaging coatings.

Here is an rather old press release form VTT on the topic :

The ALD thin coating considerably reduces the need for aluminium in packaging solutions

VTT Technical Research Centre of Finland has developed an environmentally-friendly packaging coating solution. Especially suitable for food and pharmaceutical packaging, the coating offers a new method for manufacturing fully recyclable, thin, light and air-tight packaging materials.

http://www.vttresearch.com/media/news/vtt-has-developed-a-fully-recyclable-coating-for-food-pharmaceuticals

ALD Encapsulation technologies for flexible electronics

Here is an overview on encapsulation technologies for flexible electronics covering the main technologies and players. So just scroll down to the interesting part about ALD sating the main OEMs:

• BENEQ
• Lotus
• Encapsulix
• Synos (Veeco)

From a market perspective tehr is a forecast from IDTechEx Barrier Layers for Flexible Electronics 2015-2025: Technologies, Markets, ForecastsRead more at: http://www.idtechex.com/research/reports/barrier-layers-for-flexible-electronics-2015-2025-technologies-markets-forecasts-000409.asp

Barrier layer market forecasts in US$ million

Status of flexible encapsulation to enable flexible electronics

In 2020, flexible barrier manufacturing for flexible electronic devices such as displays will be a market worth more than US$184 million, according to IDTechEx Research. That equates to 3.8 million square meters of flexible barrier films for electronics.

Although multilayer approaches – usually organic and inorganic layers – have been the most popular solution for flexible encapsulation so far, there is significant development work with solutions based on single layer approaches such as flexible glass or atomic layer deposition (ALD) which could, in later years, capture part of the market. The table below, compiled by IDTechEx analysts shows some of the characteristics of flexible glass and ALD films as developers are looking to bring them to market.

[...]

Atomic layer deposition (ALD) present and future outlook/market share 

ALD is another flexible encapsulation technology receiving a lot of attention with several players currently developing solutions based on it. It seems like it is not a short-term solution, if it will ever be one as a stand-alone layer but ALD may be a solution in a multi-layer stack in combination with a sputtered or PECVD layer if it would be possible to find a good cost structure. Regarding the intrinsic properties of the material, ALD film deposited at low temperature (T<80 C) have a superior quality when tested at room temperature. A single ALD layer less-than 50 nm thick can perform better than thicker layers deposited by sputtering or PECVD.

However, the inherent stability of the films at higher temperature/humidity (e.g. 85C/85%RH) is a problem. If PE-CVD is used, ALD film stability improves, as well as for mixed oxides, but it is still an issue. A second problem comes with particles and substrates non-uniformity. Any defect may lead at an initial non-uniform nucleation that propagates into the growing film. Furthermore, loose particles on substrates may be partially covered, but because of the extreme thinness, the thin film does not have the mechanical strength to keep them in place under mechanical stress. Any mechanical stress leads to film fracture with consequent creation of an ingress path for moisture. That is why multilayer structures are necessary.

Deposition tools are in development from Lotus, Beneq, Encapsulix and others. Exploration at Samsung SDC with ALD films for TFE was very much advertised by Synos, but resulted in failure and any further evaluation was halted. ALD for barrier on foil has better results although there are doubts and hurdles in scaling up and reaching the deposition speed required for a cost effective process.

ALD of single atom Pd on grapheme using a Arradiance Benchtop reactor

Here is an interesting report on the fabrication of single-atom Pd catalyst on graphene using ALD by researchers in Hefei, China. Pd ALD was carried out on a GEMSTAR-6TM Benchtop ALD from Arradiance at 150 °C using palladium hexafluoroacetylacetate (Pd(hfac)2) and formalin (37% HCHO and 15% CH3OH in aqueous solution).

Single-Atom Pd1/Graphene Catalyst Achieved by Atomic Layer Deposition: Remarkable Performance in Selective Hydrogenation of 1,3-Butadiene

Huan Yan, Hao Cheng, Hong Yi, Yue Lin, Tao Yao, Chunlei Wang, Junjie Li, Shiqiang Wei, and Junling Lu

Journal of the American Chemical Society

DOI: 10.1021/jacs.5b06485

We reported that atomically dispersed Pd on graphene can be fabricated using the atomic layer deposition technique. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and X-ray absorption fine structure spectroscopy both confirmed that isolated Pd single atoms dominantly existed on the graphene support. In selective hydrogenation of 1,3-butadiene, the single-atom Pd1/graphene catalyst showed about 100% butenes selectivity at 95% conversion at a mild reaction condition of about 50 °C, which is likely due to the changes of 1,3-butadiene adsorption mode and enhanced steric effect on the isolated Pd atoms. More importantly, excellent durability against deactivation via either aggregation of metal atoms or carbonaceous deposits during a total 100 h of reaction time on stream was achieved. Therefore, the single-atom catalysts may open up more opportunities to optimize the activity, selectivity, and durability in selective hydrogenation reactions.

New precursors for Atomic Layer Deposition presented at AVS ALD 2015 Portland

Here is a very good review from AVS ALD 2015 in Portland with respect to some of the new ALD precursor chemistries presented and discussed during the meeting by the ALD leading research labs and ALD industry like Intel, Adeka, BASF anad others.

New Reagents For Atomic Layer Deposition

Tailored ALD precursors form atomically thin layers of metals, dielectrics, and other compounds

By Mitch Jacoby
Chemical & Engineering News, Volume 93 Issue 32 | pp. 54-55, Issue Date: August 17, 2015

One way to shrink the nanosized wires (cross sections shown here) that interconnect electronic circuit components is to replace the “thick” tantalum nitride-like film used today to encapsulate the copper core (left) with a thinner manganese silicate film made via ALD.

Depositing thin films of copper is one thing. Making the metal stay put is quite another. “Copper has a nasty habit of diffusing if it’s not encapsulated with a protective barrier,” Gordon said. Running electric current through the tiny wires that interconnect transistors and other circuitry causes copper atoms to start migrating out of the wires, which eventually can lead to chip failure.

Gordon thinks ALD can help solve this problem. His group has developed an ALD process for making manganese silicate, a material that prevents copper diffusion at a film thickness of less than 2 nm. The chemistry is based on a reaction between a manganese amidinate compound and a silanol with tert-butoxy groups or other organic ligands. Gordon noted that there are other non-ALD ways to make manganese silicate films. But the Harvard group’s ALD method offers greater control over deposition and higher uniformity in chemical composition.

Shinjita Acharya reported on a proprietary barium pyrrole compound developed by BASF that is compatible with low-temperature ALD. Acharya is a postdoctoral researcher working with Stanford University mechanical engineer Friedrich B. Prinz, whose group is collaborating with BASF.

Full article: http://cen.acs.org/articles/93/i32/New-Reagents-Atomic-Layer-Deposition.html

Picosun see increased sale for PICOPLATFORM™ cluster tools for high volume ALD manufacturing

According to a recent press release from Picosun Oy, leading supplier of Atomic Layer Deposition (ALD) thin film coating solutions for industrial production, delivers several new PICOPLATFORM™ cluster tools for high volume ALD manufacturing in semiconductor industries.

The PICOPLATFORM™ cluster systems have quickly become a favorite of Picosun's production customers. The systems, designed to accommodate wafers up to 300 mm size, comprise Picosun's state-of-the-art technological solutions and unparalleled ALD knowhow with the most extensive selection of vacuum loading solutions for single wafer and batch processing. This makes the PICOPLATFORM™ cluster tools ideal for e.g. III-V semiconductor, LED, and MEMS device manufacturing. The now sold PICOPLATFORM™ cluster tools will be installed in the production facilities of leading, multi-billion semiconductor device manufacturers in USA and Asia.

"The PICOPLATFORM™ product family is one of the strongholds of our industrial ALD technology. The repeat sales of these systems to our core markets such as microelectronic component and sensor manufacturing prove again the unmatched level of our ALD equipment design and our excellence in hardware integration, software, and process development. Combined with our leading selection of automated batch handling systems designed to fulfill the strictest requirements of the semiconductor industries, the PICOPLATFORM™ cluster systems offer the most comprehensive turn-key solutions to fast, productive, and cost-efficient ALD manufacturing," states Mr. Juhana Kostamo, Managing Director of Picosun.

Mr. Juhana Kostamo, Managing Director of Picosun.

HERALD Workshop - ALD for Batteries, Gent, Belgium September 15-16

Workshop - ALD for Batteries

Co-organiser 

 

Program

Tuesday, September 15, 2015 - Het Pand

09:30   Registration

10:00   Philippe Vereecken, IMECInvited Talk - Conformal deposition for 3D thin-film batteries: requirements and opportunities

10:45   Sebastien Moitzheim, IMECSpatial ALD of TiO2 for 3D thin-film batteries

11:15   Felix Mattelaer, Ghent University
ALD of Manganese oxides

11:45   Mikko Ritala, University of HelsinkiPreparation of lithium containing ternary oxides by solid state reaction of atomic layer deposited thin films

12:15   Lunch

13:30   Maarit Karppinen, Aalto University
Invited Talk 

14:15   Kevin van de Kerckhove, Ghent University
Molecular Layer Deposition of Titanicone

14:45   Miia Mäntymäki, University of Helsinki

15:15   Break

15:45   Adriana Creatore, TU Eindhoven
Invited Talk - Plasma ALD of Li-based materials

16:30   Thomas Dobbelaere, Ghent University
ALD of phosphates

17:00   Closing remarks

Wednesday, September 16, 2015 - Dept. Solid State Sciences

09:00   Ola Nilsen, University of Oslo
Invited Talk - ALD of Li-containing compounds

09:45   Amund Ruud, University of Oslo
High rate iron phosphates by ALD

10:15   Break

10:45   Ruud Van Ommen, TU Delft
ALD on battery particles

11:30   Geert Rampelberg, Ghent University
Thermal and plasma enhanced ALD on powders

12:00   Lunch

13:30   Tour of the Lab 

Registration

Participation is free of charge (limited number of places):https://webapps.ugent.be/eventManager/events/cocoonworkshopbatteries

Registration will be possible from 1 July 2015. Please register before 1 September 2015. 

Location

The workshop takes place at Het Pand (on Tuesday) and the department of Solid State Sciences (on Wednesday).

Tuesday, September 15, 2015

Het Pand, Ghent University
Onderbergen 1
9000 Gent, Belgium

By public transport:

• From station Gent Sint-Pieters:Tram 1 (every 6 minutes) or tram 24 (every 20 minutes). Exit at Korenmarkt.
• From Gent ZuidTram 4 (every 6 minutes), tram 24 (every 20 minutes) or bus 17 (every 30 minutes). Exit at Korenmarkt.

By Car:

• Follow the parking signage to parking P7 Sint-Michiels. The parking is located at 50 meter from Het Pand. Take the exit Onderbergen and you come out in the wilderoosstraat, opposite Het Pand.
• An alternative parking is P8 Ramen. From here it's about 5 minutes on foot to Het Pand.

Wednesday, September 16, 2015

Department of Solid State Sciences, Ghent University
Krijgslaan 281 - Building S1
9000 Gent, Belgium

How to reach us

Contact

Department of Solid State Sciences, Ghent University

Krijgslaan 281 - Building S1
9000 Gent, Belgium

Phone: +32 (0)9 264 43 54
Fax: +32 (0)9 264 49 96

E-mail: Christophe.Detavernier@UGent.be

Flyer

Download here

Sponsors

 

Nantero closes additional funding this summer for NRAM and adds ex TSMC Executive to the Board

I have noticed that Carbon Nanotube integration into semiconductor processing as an active device or sensor material has moved into a more mature phase lately. One example is the company Nantero who earlier this summer announced closing a $31.5 million Series E financing round from new and existing investors now adds Previous TSMC Executive Dr. Shang-Yi Chiang to its Advisory Board. 

According to the press relase Dr. Chiang was previously an Executive Vice President, Co-Chief Operating Officer and Senior Vice President of R&D at TSMC before announcing his retirement in October 2013. 

NRAM is based on forming a film of Carbon Nanotubes (CNT) that are deposited onto a standard silicon substrate that contains an underlying cell select device and array lines (typically transistors or diodes) that interface the NRAM switch. The NRAM acts as a resistive non-volatile random access memory NVRAM and can be placed in two or more resistive modes depending on the resistive state of the CNT fabric. When the CNTs are not in contact the resistance state of the fabric is high and represents a “0” state (see Figure below). When the CNTs are brought into contact, the resistance state of the fabric is low and represents a “1” state. (www.nantero.com)

“Nantero continues to attract the industry’s brightest and most innovative minds both internally and on an advisory basis,” said Greg Schmergel, Co-Founder, CEO and President of Nantero. “This added expertise will be instrumental in helping the company deliver a new generation of memory with the unique properties of DRAM-like speed, nonvolatility, and ultra-high-densities, for both standalone and embedded use.”

Additional information at the www.nantero.com  tells us: NRAM can enable a variety of exciting new features and products in both consumer and enterprise electronics. This new super-fast, ultra-high density memory can replace both DRAM and flash in a single chip, or enable new applications as a storage class memory, while also delivering the low power, high speed, reliability, and endurance needed to drive the next wave of electronics innovation.

• NRAM Advantages: Extremely Low Power, Super-Fast, High Density, High Endurance
• Limitless Scalability: Can Scale Below 5 nm to Enable Terabits of Memory in the Future
• Proven Technology: Successfully Used in Mass Production CMOS Fabs for Many Years
• Exciting Future Products: Virtual Screens, Next-Generation Enterprise Systems, Rolled-up Tablets, Instant-On Laptops, 3D Video Phones and other products needing huge amounts of fast memory

Here is also a video where the founders of Nantero tells us more about the revolutionary emerging memory technology they are commercializing - claiming scaling down to 5 nm and "unlimited storage capacity" for our future electronic gizmos.

 

Zinc oxide ALD coated alpha-phase ferric oxide particles for water purification

Zinc oxide-coated alpha-phase ferric oxide particles can be used for water purification purposes. This has been demonstrated by Giuliana Impellizzeri and co-workers CNR-IMM (Institute for Microelectronics and Microsystems) Catania, Italy, using a a Picosun R-200 advanced atomic layer deposition (ALD) system to deposit polycrystalline ZnO on alpha-phase ferric oxide (α-Fe2O3) nanoparticles (which were purchased from Sigma-Aldrich).

(a) Transmission electron microscopy images of zinc oxide-coated ferric oxide (Fe2O3) core-shell nanostructures. (b) High magnification image of a single core-shell nanoparticle. (c) High magnification image of a single uncoated Fe2O3nanoparticle. (13 August 2015, SPIE Newsroom. DOI: 10.1117/2.1201508.006078)

Core-shell nanostructures with promising photocatalytic characteristics

Giuliana Impellizzeri, Alessandro Di Mauro, Guillaume Amiard, Simona Boninelli and Vittorio Privitera

13 August 2015, SPIE Newsroom. DOI: 10.1117/2.1201508.006078

One of the most pervasive problems afflicting people today is inadequate access to clean water and sanitation. By 2030—as estimated by the United Nations—47% of the world's population will live in areas with high ‘water stress’ levels. Removing pathogens, chemicals, and other contaminants to produce satisfactory water supplies (i.e., with high throughput and at a low cost) is thus a growing challenge around the world. It is thought, however, that nanotechnology can be used to improve water purification techniques. It should also be possible to reduce the cost of prohibitively expensive water cleaning methods, which are currently unaffordable for many developing countries

Full article: http://spie.org/x115222.xml?highlight=x2400&ArticleID=x115222

UPDATE: Symposium of the ALD Lab Dresden at SEMICON Europa October 6

Workshop on Atomic Layer Processing Date: 6 October 2015 Time: 09:00 - 15:10 Location: Room Columbus, Messe Dresden		Organized by:
Looking back in the evolution of IC technology, it can be stated that from the 0.25µm node on, the key for further shrinking was planarization. This was enabled by the introduction of an emerging technology, the CMP. Since the 28 nm node it can be observed that, at least in the front end of line, starting with the FinFET and possibly continuing with the surrounding gate transistor, the required structures become more and more three dimensional, while the thickness of the associated films become extremely thin (gate dielectric, work function layer, barrier layer). The emerging technology enabling this is Atomic Layer Deposition (ALD). Dresden am Abend mit Dresden Fotografie, I love Dresden und Unser Sachsen (Facebook, by Jens Heike)
ALD is based on self limiting heterogeneous chemical reactions which allow the fabrication of very thin (sub nm to few nm) layers with high accuracy (basically atomic layer precision), extremely well conformality and intrinsically high uniformity even in batch tools. Although the scientific background of ALD goes far back in history, ALD for semiconductor processing can still be considered as a novel technology.  Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology. The self limiting behavior of the heterogeneous reaction can however also be used to remove material from a substrate in an extremely controlled fashion of atomic dimensions. This process, that can be viewed as the complement to ALD is called Atomic Layer Etching (ALEt). As for ALD also ALEt can be a game changer for the semiconductor industry utilizing surface functionalization and modification similar to those we know in ALD and resulting in a chemistry-based material removal on the same atomic level as in ALD – A layer by layer removal.  In general scaling is thought about to be a shrink in the critical dimensions (CD, pitch) in the latheral xy-plane, today scaling is also taking place in the z-direction, i.e.,  a reduction in the thickness of the film stacks like the High-k Metal Gate stack. This has resulted in that the thicknesses of the film stacks of devices today are now routinely approaching <20 Å nm providing an opportunity for slow and precise etching by ALEt. We hope that this new part of the ALD Lab Dresden Symposium will allow for increased scientific and technological discussion for enabling ALEt and learning from ALD and related plasma based processing techniques like Plasma CVD and Reactive Ion Etching.

AGENDA
09:00	Welcome	Organized by: Supported by:
	Prof. Johann W. Bartha, TU Dresden
09:15	In situ monitoring of Atomic Layer Deposition in porous materials
	Martin Knaut, TU Dresden
09:40	Passivation of MEMS by Atomic Layer Deposition
	Matthias Schwille, Robert Bosch
10:05	TBD
	Colin Georgi, TU Chemnitz/FhG ENAS
10:30	TBD
	Stefan Riedel / Sascha Bönhardt, FhG IPMS-CNT
10:55	ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
	Mario Krug, FhG IKTS
11:20	ALD for solar cell application
	Ingo Dirnstorfer, NaMLab
11:45	Plasma enhanced ALD process for TiO2- and WO3- films
	Alexander Strobel, FH Zwickau
12:10	Lunch Break (Conversation, Networking, Finger food)
13:00	Atomic Layer Etching
	Jonas Sundqvist, Lund University
13:25	Spatial Atomic Layer Deposition and Atomic Layer Etching
	Prof. Fred Roozeboom, TU Eindhoven
13:50	Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
	Harm Knoops, Oxford Instruments/TU Eindhoven
14:15	TBD
	Stephan Wege, Plasway
14:40	Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation
	Jacques Kools, Encapsulix
15:05	Closing Remarks / Wrap Up
	Prof. Johann W. Bartha, TU Dresden
15:10	End

Registration

No pre-registration required but you must register as a visitor, in order to gain access to the venue:

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Demand for 200 mm tools outstrips supply according to Applied Materials

According to David Lammers at Applied Materials (Nanochip COVER STORY: DEMAND FOR 200MM TOOLS OUTSTRIPS SUPPLY).

This must be a good opportunity for the ALD suppliers like Picosun, Oxford Instruments, BENEQ and Ultratech CNT to get into the game and supply ALD chambers for all kinds of More than Gordon Moore applications like MEMS, Capacitors and other devices and single layer applications. As far as I know you can´t buy new ASM Pulsar 200 mm chambers anymore so have to get a 300mm bridge tool and the other options you have are for sure 200 mm large batch furnaces from ASM or Tokyo Electron but those have cycle time penalty and high thermal budget and none of these have PEALD capability, which as reported here many times is booming in scientific activity and possibly also in production.

A wide variety of systems, ranging from smartphones and autos to wearables, rely on trailing-edge devices made on 200mm wafers. (Source: Applied Materials)

TSMC and its joint ventures own the most 200mm wafer fab capacity, while STMicroelectronics, a power in the MEMS sensor field, is the leading 150mm wafer processor. (Source: IC Insights)

Just to refresh everybody's memory, eher is a table summarizing many of those alternatives for 200 mm ALD suppliers published by ALDPulse some time ago.