AIXTRON Unveils G10-GaN Cluster Solution for Power Electronics Market

AIXTRON SE has unveiled the G10-GaN cluster solution for high-volume manufacturing of Gallium Nitride (GaN) power and RF devices. The platform delivers superior performance, a compact design, and cost-efficiency. Dr. Felix Grawert, CEO of AIXTRON, highlighted its potential in reducing global CO2 emissions and its growing demand in applications like mobile fast chargers, data centers, and solar energy. The system improves material uniformity, extends equipment uptime, and offers a 25% cost reduction per wafer, making it a significant advancement in semiconductor technology.

Herzogenrath, September 6, 2023 – AIXTRON SE, the semiconductor industry's leading deposition equipment supplier, has introduced its latest innovation, the G10-GaN cluster solution for Gallium Nitride (GaN) based power and radio frequency (RF) devices. This groundbreaking platform is making its debut at SEMICON Taiwan (September 6-8, 2023) in Taipei, offering unparalleled performance, a compact design, and exceptional cost-efficiency.

The cluster can be equipped with up to three process modules, delivering a record capacity of 15x200 mm wafers thanks to Planetary batch reactor technology – enabling a 25 percent cost reduction per wafer compared to previous products. LINK

Dr. Felix Grawert, CEO and President of AIXTRON SE, proudly announced, "Our new G10-GaN platform has already received qualification for high-volume production of GaN Power devices from a prominent US device manufacturer. It delivers double the productivity per cleanroom area compared to our previous product, enhances material uniformity, and provides a competitive edge to our customers."

GaN-based technologies are gaining importance in the drive to reduce global CO2 emissions due to their significantly more efficient power conversion capabilities compared to traditional silicon (Si). GaN can reduce power losses by a factor of two to three. Dr. Grawert noted, "We anticipate continuous growth in the GaN market throughout this decade and beyond. GaN has already replaced silicon in fast chargers for mobile devices, and we are witnessing rising demand in data centers and solar applications."

AIXTRON has been at the forefront of GaN on Si process and hardware development for over two decades. The company's AIX G5+ C planetary reactor, known for being the first fully automated GaN Metal-Organic Chemical Vapor Deposition (MOCVD) system with In-Situ Cleaning and Cassette-to-Cassette automation, is now an industry-standard tool for GaN power production. The new G10-GaN cluster solution builds upon this legacy, elevating every performance metric.

Designed to maximize cleanroom space, the G10-GaN features innovative reactor inlets that enhance material uniformity, resulting in optimized device yields. The platform incorporates on-board sensors, a new software suite, and fingerprint solutions to ensure consistent performance across runs, even between maintenance cycles, extending equipment uptime by over 5% compared to the previous generation.

The cluster can accommodate up to three process modules, boasting a record capacity of 15x200 mm wafers thanks to Planetary batch reactor technology. This enables a remarkable 25% reduction in cost per wafer compared to previous products, a factor that promises significant savings for manufacturers.

AIXTRON's G10-GaN cluster solution positions the company as a key player in the ever-evolving landscape of GaN-based power and RF devices, furthering its commitment to advancing semiconductor technology for a sustainable future.