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NordAmps in Lund,
Sweden, has developed InGaAs nanowire transistors with GAA high-k /metal gate (HKMG) capable of the high frequencies required for 5G and 6G data
transfer and logic data processing, with significantly lower energy
consumption.
The structures are fully compatible with a standard
300 mm standard Si CMOS flow and require less mask steps compared with
conventional technology.
NordAmps represents the convergence of research by global leaders in nanotechnology with leading edge application needs.
Source: NordAmps LINK
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