TOKYO, Sep 30, 2020 - (ACN Newswire) - TANAKA Holdings Co., Ltd. (Head office: Chiyoda-ku, Tokyo; Representative Director & CEO: Koichiro Tanaka) announced today that TANAKA Kikinzoku Kogyo K.K. (Head office: Chiyoda-ku, Tokyo; Representative Director & CEO: Koichiro Tanaka), which operates the TANAKA Precious Metals manufacturing business, has developed a new liquid ruthenium precursor named "TRuST" for CVD[1] and ALD[2] processes. The vapor pressure of "TRuST" is more than 100 times higher as compared to that to previous liquid ruthenium (element symbol Ru) precursors[3], which is currently the world's highest vapor pressure value at room temperature as per TANAKA's internal evaluation.
During this precursor development, TANAKA Kikinzoku Kogyo focused on
material design and synthesis research, while Professor Soo-Hyun Kim,
Ph.D., School of Materials Science and Engineering, College of
Engineering at Yeungnam University in South Korea, researched to
optimize the film formation characteristics.
Technologies
developed through this collaboration will help increase performance and
reduce energy consumption for the semiconductor devices used in
smartphones, computers, and the data centers where demand is to grow
well into the future.
Precursors are metal-organic compounds used
in chemical vapor deposition (CVD), atomic layer deposition (ALD) and
other processes to form thin metal films or metal wiring on substrates.
CVD and ALD processes enable the formation of films with superior step
coverage on various types of base substrate. These are useful methods
for forming films as semiconductors become increasingly miniaturized,
with increased structural complexity, and narrower wires with every new
generation.
TANAKA Kikinzoku Kogyo has developed a range of
precious metal precursors over the years, including ruthenium
precursors. This time, computer simulation and other techniques were
used to achieve miniaturization and optimization of the molecular
structure. This resulted in the successful development of a precious
metal compound in a liquid form, with high vapor pressure, and thermal
stability suited for film formation, all of which are important
characteristics for precursors. As a result, this compound has the
world's highest vapor pressure over 100 times higher than that of
previous liquid ruthenium precursors. The higher the vapor pressure of
precursors and the smaller their molecular structure, the higher the
possible concentration of precursor in the film formation chamber, and
the greater the adsorption density of precursor molecules on the
substrate surface. Compared to previous precursors, this achieves
excellent step coverage and improved film formation speed.
According
to research carried out at Yeungnam University, ALD film formation at
approximately 1.7 angstrom (A) per cycle is possible, which is the
world's fastest of its type using liquid ruthenium precursor. Also,
specific resistivity after film formation is approximately 13
microhm-cm, which is close to the value of bulk ruthenium metal (7.6
microhm-cm).
When bulk ruthenium is used for vapor deposition,
with a temperature as high as 3000 degrees C. However, if it is
converted into an organometallic compound of ruthenium precursor, it can
be vaporized at low temperatures (between room temperature to 200
degrees C) under vacuum. As a result, the formation of high-quality
ruthenium film with excellent step coverage at high productivity is
expected. This has been an issue in the past because it is technically
difficult to achieve all these characteristics at the same time. With
the development of "TRuST" however, it is now possible.
Samples of Shipments of "TRuST" should begin shipping samples are planned to start in October 2020.
Background and TANAKA Kikinzoku Kogyo's development of precursor for CVD/ALD processes
In
the past, the most common wiring materials used for semiconductors were
copper, tungsten and cobalt. However, as semiconductors have evolved,
there are increasing expectations for the precious metal ruthenium to
promote further miniaturization of semiconductors because of its lower
resistance and higher durability. With its superior characteristics,
ruthenium is also being considered for use in transistor gate electrodes
and DRAM capacitor electrodes.
The progress of technologies such
as IoT, AI, and 5G over recent years has led to rapidly increasing
volumes of digital data used in clouds, smartphones, and computers.
Therefore, the need for even greater miniaturization of semiconductors
is increasing to enable the creation of devices with higher performance
and lower energy consumption. As a specialized manufacturer of precious
metals, TANAKA Kikinzoku Kogyo will continue contributing to this
evolution of semiconductors through the development of high-quality
semiconductor materials.
With the support of Professor Soo-Hyun
Kim, from the College of Engineering at Yeungnam University, a
researcher from TANAKA Kikinzoku Kogyo will give a presentation of this
technology at the "International Interconnect Technology Conference
(IITC) 2020", which will be held online from October 5-8, 2020. The
title of the presentation is High-growth-rate atomic layer deposition of
high-quality Ru Using a Novel Ru metalorganic precursor.
[1]
Chemical vapor deposition (CVD): CVD is a chemical film formation
method. It is a method of forming thin metal films on the surfaces of
base materials or substrates through a chemical reaction induced and
accelerated by directing energy, in forms such as heat, plasma and
light, at gaseous vapor material fed into a reaction chamber at
pressures between atmospheric pressures to medium vacuum pressures
(100-10-1 Pa).
[2] Atomic layer deposition (ALD): Both CVD and ALD
are film formation methods that use chemical reactions inside reaction
chambers to deposit material onto substrates through the vapor phase.
The main difference between the two methods is that while CVD
continually forms atomic and molecular layers, ALD forms the layers
intermittently one layer at a time.
[3] Precursors: Precursors are compounds used as the raw material for forming thin metal films and metal wiring on substrates.
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