Beneq ALD for Power Devices

Atomic Layer Deposition (ALD) provides damage-free surface preparation, and is capable of depositing a variety of high-k dielectric layers with excellent step coverage and quality. 

Beneq ALD provides damage-free surface preparation and deposition of a variety of high-k dielectric layers with excellent step coverage and quality. Gate dielectric stacks deposited by ALD using Beneq Transform™ enable next generation Si, GaN and SiC Power Devices

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