Epiluvac from Sweden launch MOCVD - ALD Combo reactors for Wide Band Gap Epi materials

Epiluvac from Sweden has extended it offer for 200 mm Sic and GaN Wide Band Gap (WBG) Epitaxy reactors for SiC and GaN to include also ALD process mode. This is very impressive since there are very few that can master the two most advanced CVD processes on the market, MOCVD Epitaxy resp. ALD and now even in the same reactor!

From an ALD point of view it is also very unusaul to have the possibilioty to process at high temperature. Most ALD reactors operate in the range 70 to 600 °C, but Epiluvac reactors can go up all the way to 1800 °C.

SiC (Epiluvac ER3-C1) or GaN (Epiluvac ER3-N1) epitaxy system (https://epiluvac.com/sic/)

• Up to 200 mm (8”) wafer diameter.
• Excellent uniformity through hot-wall topology, uniform gas flow and cell temperature profiling.
• Up to 1800 °C
• Quartz-free and ready for chlorinated processes.
• Hot wafer loading/unloading in a clean inert atmosphere minimizes particle contamination.
• Modular design with cluster configuration and several automation options.
• Suitable for low/medium volume production and R&D.