17th-20th September 2018
Deadline for abstract submission: Monday 21st May
ALD is a chemical deposition technique
traditionally used in the field of microelectronics and large area
displays. In recent years ALD has seen a huge evolution in terms of the
materials that can be deposited, the reactors and the applications. This
symposium aims at highlighting recent developments in the field of ALD
of functional materials and devices and to present the ALD community to
the broader materials science community.
Scope:
ALD is a Chemical Vapour Deposition technique
that is surface-limited and self-terminating. As a result, film
thickness can be controlled very precisely to the nanometer, high aspect
ratio features can be coated with a unique level of conformality, and,
film homogeneity is unrivalled. ALD, with its unique characteristics,
was developed in the 1970s to meet demands in the fields of
microelectronics and large area displays, and these have remained its
main applications, both at the lab and industrial scale, for many years.
In terms of materials, metal oxides and in particular a handful of them
(HfO2, Al2O3, TiO2, ZnO and Ta2O5)
where the sole object of ALD research. With the advent of
nanotechnology, ALD has gained momentum due to the need of controlling
and engineering surfaces and interfaces. As a result, the number of
laboratories equipped with an ALD system has increased significantly,
which has resulted in an exponential increase in the number of
publications involving ALD.
The second objective is to bring together the
ALD research and community in a dedicated symposium, as opposed to being
diluted among many symposia depending of the materials, application,
etc., as is currently the case in past E-MRS meetings. This symposium is
meant to be the forum in which the ALD community will present the
recent developments in ALD to the wider materials community. We expect
it to foster many new collaborations that will lead to new materials,
applications and chemistries being developed.
Hot topics to be covered by the symposium:
Papers are solicited on (but not limited to) the following topics:
- Area-Selective ALD
- Spatial ALD and atmospheric processing, high throughput
- New reaction mechanisms, precursors and applications
- Deposition of Hybrid/Organic materials by MLD
- Modelling of reaction mechanism
- Barrier layers, protective coatings
- Energy applications (batteries, supercapacitors, solar cells, photo-splitting)
- Advanced characterization
- Energy activated ALD
- Deposition of 2D materials, sulphides
- ALD for MEMS
- Solution ALD
- Atomic Layer Etching (ALE)
Confirmed invited speakers
- Thomas Riedl (Universität Wuppertal, Germany)
- Angel Yanguas-Gil (Argone National Laboratory, USA)
- Jullien Bachmann (Friedrich Alexander University, Germany)
- Erwin Kessels (Technical University Eindhoven, The Nedherlands)
- Ruud van Ommen (Delft University of Technology, The Netherlands)
- Riikka Puurunen (Aalto University, Finland)
- Christoph Vallée (Laboratoire des technologies de la Microélectronique, France)
- Elsje Alessandra Quadrelli (Laboratory of chemistry, catalysis, polymers & processes, Villeurbanne, France)
- Maarit Karppinen (Alto University, Finland)
- Marek Godlewski (Institute of Physics, Polish Academy of Sciences, Poland)
- Olaf Nilsen (Department of Chemistry, UiO, Olso, Norway)
- Anjana Devi (Ruhr-Universität Bochum)
Confirmed members of the scientific committee
- Elisabeth Blanquet, SIMAP-University Grenoble Alps/CNRS, France
- Nathanaelle Schneider, CNRS-IPVF, France
- Alexey Y. Kovalgin, UOTwente, Netherlands
- Anjana Devi, Ruhr-Universität Bochum, Germany
Symposium Orgaizers
David Muñoz-Rojas, Laboratoire des Matériaux et du Génie Physique, Grenoble, France
Seán T. Barry, Carleton University, Ottawa, Canada
Maria Berdova, Industrial Focus group XUV optics, University of Twente, The Netherlands
Christoph Hossbach, Picosun Europe GmbH, Dresden, Germany
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