Showing posts with label precursors. Show all posts
Showing posts with label precursors. Show all posts

Tuesday, June 16, 2020

Ruhr-Universität Bochum and Carleton University Ottawa discover new promising cobalt molecule for CVD and ALD

[Press release, Uni Bocum, Germany LINK] Searching for small but stable cobalt compounds, a team has discovered a complex that is relevant for material research and exhibits properties that have not been reported for almost 50 years for a compound alike.

A research team from Ruhr-Universität Bochum (RUB) and Carleton University in Ottawa has manufactured a novel, highly versatile cobalt compound. The molecules of the compound are stable, extremely compact and have a low molecular weight so that they can be evaporated for the production of thin films. Accordingly, they are of interest for applications such as battery or accumulator production. Because of their special geometry, the compound also has a very unusual spin configuration of ½. A cobalt compound like that was last described in 1972. The team published their report in the journal Angewandte Chemie International Edition from 5 May 2020.




A Rare Low‐Spin CoIV Bis(β‐silyldiamide) with High Thermal Stability: Steric Enforcement of a Doublet Configuration. Published under Creative Commons Angew. Chem. Int. Ed., First published: 05 May 2020, DOI: (10.1002/anie.202001518)

The geometry makes the difference

“The few known cobalt(IV) compounds exhibit high thermal instability and are very sensitive towards air and moisture exposure. This impedes their implementation as model systems for broad reactivity studies or as precursors in material synthesis,” explains lead author David Zanders from the Inorganic Materials Chemistry research group in Bochum, headed by Professor Anjana Devi. In his ongoing binational PhD project, which has been agreed upon by Ruhr University and Carleton University by a Cotutelle agreement, David Zanders and his Canadian colleagues Professor Seán Barry and Goran Bačić discovered a cobalt(IV) compound that does not only possess the aforementioned properties but also exhibits an unusually high stability.

Based on theoretical studies, the researchers demonstrated that a nearly orthogonal embedding of the central cobalt atom in a tetrahedrally arranged environment of connected atoms – so-called ligands – is the key to stabilising the compound. This specific geometric arrangement within the molecules of the new compound also enforces the unusual electron spin of the central cobalt atom. “Under these extraordinary circumstances, the spin can only be ½,” points out David Zanders. A cobalt compound with this spin state and similar geometry has not been described for almost 50 years.

Following a series of experiments, the team also showed that the compound has a high volatility and can be evaporated at temperatures of up to 200 degrees Celsius with virtually no decomposition, which is unusual for cobalt(IV).

Promising candidate for ultra-thin layers

Individual molecules of the compound dock onto surfaces in a controllable manner after evaporation. “Thus, the most fundamental requirement of a potential precursor for atomic layer deposition has been fulfilled,” asserts Seán Barry. “This technique has increasingly gained in importance in industrial material and device manufacturing, and our cobalt(IV) compound is the first of its kind that is fit for this purpose.” “Our discovery is even more exciting as the high-valent oxides and sulfides of cobalt are considered to have great potential for modern battery systems or microelectronics,” adds Anjana Devi. Following frequent charging and discharging, electrodes in rechargeable batteries become more and more unstable, which is why researchers are looking for more stable and, consequently, more durable materials for them. At the same time, they also focus on using new manufacturing techniques.

“This binational collaboration, which was initiated by David Zanders, has pooled the creativity and complementary expertise of chemical engineers from Bochum and Ottawa. All this has produced unexpected results and was certainly the key to success,” concludes Anjana Devi.

Original publication

David Zanders, Goran Bačić, Dominique Leckie, Domilola O. Odegbesan, Jeremy Rawson, Jaseon D. Masuda, Anjana Devi, Seàn T. Barry: A rare low‐spin Co(IV) Bis(β‐silyldiamide) with high thermal stability: Steric enforcement of a doublet configuration, in: Angewandte Chemie International Edition, 2020, DOI: 10.1002/anie.202001518

Tuesday, May 19, 2020

Hafnium, Zirconium: Australian Strategic Materials a step closer to completing commercial pilot plan

Recent semiconductor materials related trade issues between Japan and South Korea have led South Korea to secure alternative sourcing of photoresists and metals for their semiconductor industry. This includes essential minerals for hafnium and zirconium ALD precursors that are used in the manufacturing of DRAM and Foundry logic at SK Hynix and Samsung fabs.

Besides the tension with Japan, China's dominance in the supply of zirconium chemicals and materials has highlighted the additional risk in the critical materials supply change for its important semiconductor and high tech industries.

One such action has been setting up a pilot plant in South Korea for hafnium and zirconium metal in joint development with Australias Alkane and its subsidiary Australian Strategic Materials (ASM). The joint undertaking has now moved to the next phase for a commercial operation of a pilot plant as reported by Alkaine below.

Australian Strategic Materials a step closer to completing commercial pilot plan

Australian Strategic Materials (ASM), a wholly owned subsidiary of Alkane Resources is getting closer to completing the construction of a commercial pilot plant facility in South Korea that will enable critical metal oxides, including zirconium and hafnium, to be converted into metals in clean, carbon-free way.

As the Covid-19 pandemic continues to highlight weaknesses in critical minerals supply chains globally, ASM has confirmed in Alkane Resources' quarterly recently it has received interest in both potential future supply and partnership from a number of parties in South Korea and elsewhere. ...

Read more.



Read more about previous blog about the Alkane Dubbo project in New South Wales, Austrailia:

The Dubbo Project - The High-k mine in Dubbo, NSW Australia

Hafnium product breakthrough consolidates Dubbo Project business case

China’s water crisis stems the flow of zirconium and rare earths for global industries

Alkane Resources reports that zirconium oxychloride (ZOC) prices are up 40% since January 2017


Monday, May 4, 2020

Mitsubishi Chemical to Bolster Technology Platform Through Acquisition of American Organic and Inorganic Hybrid Chemicals Manufacturer Gelest

TOKYO, NEW YORK and MORRISVILLE, Pa., April 30, 2020 –Mitsubishi Chemical Corporation (MCC; Head office:Tokyo, Japan; President: Masayuki Waga) announced today that its subsidiary Mitsubishi Chemical America, Inc.(MCA; Head office: New York, the United States; President: Steve Yurich)has entered into a definitive agreement to acquire all of the issued and outstanding shares of Gelest Intermediate Holdings, Inc., the parent of Gelest, Inc. (Gelest; Head office: Pennsylvania, the United States; Chairman and CTO: Barry Arkles, CEO: Ken Gayer)and a portfolio company of New Mountain Capital, LLC. (NMC; Head office: New York, the United States). 
 
 
Completion of the transaction is expected in 2020, pending customary regulatory review and approval. Gelest is an American innovator, manufacturer, and supplier of silicones, organosilanes, metal-organics, and specialty monomers for advanced technology end markets including medical devices, life sciences, microelectronics, and personal care. Gelest helps customers succeed by assisting them to develop and supply the chemistry to solve their most challenging materials science problems and enable their new product technology.“We are excited to acquire Gelestas its business fits well within MCC’s long-term strategy,” said Steve Yurich, President of MCA. “Since becoming familiar with Gelest, we have recognized the tremendous capabilities in research and development and production that help create its outstanding position with key customers. Furthermore, MCC’s operating resources and customer network will enhance the ability to bring Gelest’s technologies to market and accelerate the development of new customer solutions to drive advances in digital social infrastructure, vision care, and other life-sciences applications. 
 
We look forward to working alongside the team at Gelest to drive the continued growth of the company.”“We are extremely proud of the efforts of everyone who has contributed to make Gelest the Company that it is today, with world-class technology and supply capabilities, made possible by the industry-leading team we have built and support from NMC for our strategic investment programs. This has made Gelest an extremely valuable partner to customers around the world,” said Barry Arkles, Chairman and CTO of Gelest. 
 
Ken Gayer, CEO of Gelest, added, “Weare excited to join MCC during our next stage of growth. MCC’s breadth and depth in the advanced materials sector will allow Gelest to create even more value for our customers and opportunities for our employees

Monday, April 27, 2020

Deposition Precursors Market Growth threatened by COVID-19 impacts

TECHCET announced that the market for atomic layer deposition (ALD), chemical vapor deposition (CVD), and spin-on deposition (SOD) precursor chemicals needed for semiconductor fabrication is looking healthy for 1Q2020. In particular, demands for cobalt (Co) and hafnium (Hf) precursors are forecasted to grow steadily over the next quarter. However, impacts of COVID-19 on world economies are still uncertain, and precursor market growth may be impacted negatively, as shown in the Figure (below) from TECHCET's latest ALD, CVD, SOD Precursors Quarterly Market Update.

COVID-19 has had an impact on cobalt (Co) metal supply-chains globally, since China dominates production of electric-vehicle batteries which use cobalt as a critical material. The extended manufacturing shut-down in China to limit the spread of COVID-19 after the Lunar New Year holiday cut demand for cobalt chemicals and were further slowed by logistics challenges. Cobalt demand in China and prices are expected to increase in the second-half of 2020.

Trade war and other bilateral trade conflicts relating to semiconductor materials supply (e.g. Japan - South Korea) have triggered a focus on securing localized sources of critical materials in all regions. For example, South Korean IC fabs are now seeking hafnium (Hf), zirconium (Zr), and Rare Earth Elements (REE) supplies from Australia to avoid being dependent on China.



To purchase Report go to: https://techcet.com/shop/

ABOUT TECHCET: TECHCET CA LLC is an advisory service firm focused on process materials supply-chains, electronic materials technology, and materials market analysis for the semiconductor, display, solar/PV, and LED industries. Since 2000, the company has been responsible for producing the Critical Material Reports™ for the Critical Materials Council (CMC), covering silicon wafers, semiconductor gases, wet chemicals, CMP consumables, Photoresists, and ALD/CVD Precursors. For additional information about these reports or CMC subscription membership please contact info@techcet.com, +1-480-332-8336, or go to www.techcet.com.

Monday, April 20, 2020

Choppy Waters for Shipping $50B of Semiconductor Materials in 2020

Risky Sailing on the Global Supply-Chain Seas

San Diego, CA, Apr 17, 2020:TECHCET announces that:
 
• 2020 global material revenues in semiconductor manufacturing forecasted to decline by 3.0% year-over-year (YoY) despite growth in 1Q2020,
• Impact of COVID-19 pandemic on the global economy is creating choppy waters for shipping and supplying critical materials, as highlighted in recent Critical Materials Council (CMC) monthly meetings, and
• With a return of global economic growth by 2021, compound annual growth rate (CAGR) through 2025 is forecast at 3.5% as shown in the Figure (below).
 
 

“From our market research, materials suppliers are increasing production and sales to ensure safety-stock throughout the supply-chain in case there are further disruptions due to COVID-19 cases,” remarked Lita Shon-Roy, TECHCET President and CEO. “Even without further disruptions, we can already see leading economic indicators such as unemployment levels, metal prices and container shipping indices point toward a significant decline in global GDP.” This is supported by the International Monetary Fund’s (IMF’s) current outlook on 2020.

Currently, almost all chip fabs appear to be running at normal levels, with a few exceptions. During this difficult period, YMTC in Wuhan, China reportedly has maintained R&D and grown production of 3D-NAND chips. However, chip fabs in Malaysia report that the government required companies to request permission to continue operating at 50% staffing levels. One company in France had to temporarily reduce production due to their labor union insisting on temporary workforce reductions.

Significant value-added engineered materials including specialty gases, deposition precursors, wet chemicals, chemical-mechanical planarization (CMP) slurries & pads, silicon wafers, PVD/sputtering targets, and photoresists & ancillary materials for lithography are reporting healthy orders and in some cases will see better than expected revenues for 1Q2020 and April 2020. However, more than 60% of all materials are expected to be negatively impacted before year-end.

Overall demand for commodity materials, such as silane and phosphoric acid, is expected to decline YoY in 2020 by an average of 3% due to softening of the global economy. Average selling prices (ASP) for electronic-grade commodities may drop due to cost reductions in feed-stocks; for example, the global helium (He) gas market which had been forecasted to be in shortage with high ASPs throughout 2020 has already improved due to COVID-19 slowing down helium demand.

DRAM, 3D-NAND, and MPU chips for server / cloud-computing applications are now in high demand for virtual meetings and remote work. It is yet unclear how much of an increase in materials shipments will be needed to support this segment, however from TECHCET’s modeling of prior cycles it will likely be >7%. Despite such an increase in the materials used to make leading-edge ICs to build out data centers, shipments in support of legacy node IC fabrication are expected to decline this year.

Consequently, cloud-computing growth may not compensate for overall reduced semiconductor materials demands caused by economic downturns this year. By 2021 the global economy and all chip fabs should return to healthier growth, with materials markets for all IC devices expected to increase at a CAGR of +3.5% through 2025.

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Friday, April 17, 2020

Volatile ALD & CVD Magnesium precursors for non-volitile memory and flexible display applications


The escalating struggle with further scaling of integrated circuit chips, on account of certain feature sizes in advanced chips gradually hitting atomic dimensions, has compelled the semiconductor industry to become more welcoming to new materials as a possible solution to continued PPAC (Power-Performance-Area-Cost) improvement. Traditionally not so popular in the semiconductor industry, Magnesium (Mg) is being explored for use in various related applications due to the fact that it forms semiconductor compounds with oxygen, sulfur, selenium, and tellurium.

For example, Magnesium Oxide (MgO) is a semiconductor with a wide band-gap and semi-insulating properties. A very thin semi-insulating MgO layer between two metallic ferromagnetic layers is used as a “magnetic tunnel junction”. Magnetic tunneling junctions (MTJs) based on the CoFeB/MgO/CoFeB layer have received great attention as a promising candidate for future spin logic devices. Among various applications of MTJs, spin-transfer-torque magnetic random access memory (STT-MRAM) is emerging as a strong candidate as a next-generation nonvolatile memory due to its simple integration scheme, low voltage operation, and high speed. To fulfill certain critical requirements of 3D MTJ based sub-20 nm, high-density STT-MRAM, Samsung Advanced Institute of Technology (SAIT), Korea, has recently investigated both thermal and plasma-enhanced ALD for depositing a MgO tunnel barrier using bis(cyclopentadienyl)magnesium precursor under the scope of the Industrial Strategic Technology Development Program (10041926, Development of high-density plasma technologies for the thin-film deposition of nanoscale semiconductors and flexible-display processing) funded by the Ministry of Knowledge Economy (MKE, Korea). (Link)



Figure 1. TEM images of (a) Thermal ALD MgO, (b) PE-ALD MgO grown at 300 °C on a CoFeB layer

Recently, Panasonic Corporation, Japan, together with the National Institute of Material Science, Japan, reported ALD based Magnesium Phosphate (MgPO) thin-films as magnesium-ion conducting solid-state electrolytes that are considered to be promising candidates for future energy storage and conversion devices. The deposition was carried out at lower deposition temperatures, ranging from 125 to 300 °C, using bis(ethylcyclopentadienyl)magnesium. (Link)

Apart from semiconductor and energy storage applications, Mg is also an interesting candidate for astronomical and optical applications. For example, recent NASA missions that make observations in the ultraviolet, such as the Hubble Space Telescope and the Galaxy Evolution Explorer, employed primary mirrors coated with aluminum and further protected by thin films of Magnesium Fluoride (MgF2). Therefore, the Jet Propulsion Laboratory, California Institute of Technology, under a contract with NASA, reported ALD of MgF2 using bis(ethylcyclopentadienyl)magnesium supplied by Strem Chemicals, Inc. (Link)



Figure 2. Photograph of a concave mirror and convex diffraction grating for a next-generation UV instrument prototype coated with electron beam evaporated aluminum and a protective coating of 10 nm ALD MgF2 deposited at 150 °C.

Strem Chemicals, Inc., a leading fine chemicals supplier, headquartered in Newburyport, Massachusetts, USA, offers the most preferred precursors worldwide for ALD of Mg-based compounds, i.e, bis(ethylcyclopentadienyl)magnesium [Mg(CpEt)2] (catalog number 12-0510). The colorless to pale yellow liquid phase precursor with a density of 0.95 g/cm3 at 20 °C and vapor pressure of 0.0315 Torr is also sold by Strem Chemicals as pre-packed in cylinders:

§  98-4006: Bis(ethylcyclopentadienyl)magnesium, min. 98%, 12-0510, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD

§  98-4010: Bis(ethylcyclopentadienyl)magnesium, min. 98%, 12-0510, contained in high-temp 50 ml Swagelok® cylinder (96-1071) for CVD/ALD
 
About Strem Chemicals: Strem is an employee-owned fine chemicals supplier, manufacturing and marketing high-quality specialty chemicals for more than half-a-century. They provide custom synthesis and FDA inspected current good manufacturing practice (cGMP) services to its clients from academia as well as industry and also to government R&D labs. What distinguishes Strem from the other chemical suppliers are its ISO 9001 Quality Management System (QMS) standard and documenting procedures including for example “Color and Form” for every product as listed in the product details as a quality indicator for researchers. This helps Strem deliver precursors with a minimum metals purity of  99%, with some  some metal precursors attaining as high as 99.9999% metal’s purity. Strem offers over 5,000 specialty products in the area of metals, inorganics, organometallics, and nanomaterials. Strem’s product range includes:



Products Mentioned in this Blog:
12-0510: Bis(ethylcyclopentadienyl)magnesium, min. 98% (114460-02-5)
98-4006: Bis(ethylcyclopentadienyl)magnesium, min. 98%, 12-0510, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD
98-4010: Bis(ethylcyclopentadienyl)magnesium, min. 98%, 12-0510, contained in high-temp 50 ml Swagelok® cylinder (96-1071) for CVD/ALD


Related Product Lines & Resources:


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Promotional blog written and researched by Abhishekkumar Thakur and Jonas Sundqvist, BALD Engineering AB