Tokyo Electron Introduces Breakthrough Memory Channel Hole Etch Technology for 3D NAND Flash, Reducing Global Warming Potential by 84%

Tokyo Electron's Innovative Etch Process Enables Ultra-fast 10-µm-deep Etching for 3D NAND Flash with Over 400 Layers, Showcased at Symposium on VLSI Technology and Circuits

Tokyo Electron (TEL) has achieved a significant technological milestone by developing a cutting-edge etch technology capable of creating memory channel holes in advanced 3D NAND devices with over 400 layers. This breakthrough process, pioneered by the development team at Tokyo Electron Miyagi, leverages cryogenic temperatures to achieve exceptionally high etch rates, marking the first time dielectric etch application has been utilized in this temperature range.

The groundbreaking technology not only enables the etching of memory channel holes up to 10 µm deep with a high aspect ratio in just 33 minutes but also boasts an impressive 84% reduction in global warming potential compared to previous methods. The etched structure exhibits well-defined geometry, as demonstrated by cross-section SEM and FIB cut images.

Cross section SEM image of memory channel hole pattern after etching, and FIB cut image at the hole bottom.

TEL's research team behind this groundbreaking technology will present their findings at the prestigious 2023 Symposium on VLSI Technology and Circuits, a renowned international conference on semiconductor research. Their contribution showcases the potential for even larger capacity 3D NAND flash memory.

The presentation, titled "Beyond 10 µm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers," will be delivered by Y. Kihara, M. Tomura, W. Sakamoto, M. Honda, and M. Kojima from Tokyo Electron Miyagi Ltd. The session, scheduled for Tuesday, June 13, from 2 p.m. to 3:40 p.m., will take place in the NAND Flash section of the Technology Session 3 [Shunju II].

For detailed event information about the 2023 Symposium on VLSI Technology and Circuits, please click here. Stay tuned for TEL's technology presentation, which combines semiconductor advancements and environmental protection efforts. 2023 Symposium on VLSI Technology and Circuits

Source: Tokyo Electron Develops Memory Channel Hole Etch Technology That Enables Ultra-fast 10-µm-deep Etching for 3D NAND Flash with Over 400 Layers and an 84% Reduction of Global Warming Potential | News Room | Tokyo Electron Ltd. (tel.com)