The Arradiance GEMStar XT-DP plasma-enhanced atomic layer deposition (ALD) system was installed at MIT.nano in May.
The system is dedicated specifically to deposit high-quality nanometer-scale thin oxide films including aluminum oxide, hafnium oxide, zirconium dioxide, and silicon dioxide. The Arradiance ALD can be used for samples ranging from small pieces up to 200-mm wafers and has a load lock that isolates the deposition chamber from the user, allowing for better contamination control.
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