Saturday, January 4, 2020

Samsung's 3 nm Gate-All-Around FET prototype

Samsung has succeeded in making the first strides towards the 3 nm process, as reported by the Korean Maeil Economy this week. According to the report, Samsung's goal is to become the world's number one semiconductor manufacturer by 2030.

Samsung's work on the 3 nm process is based on the Gate All Around (GAAFET) technology rather than FinFET. This supposedly reduces the total silicon size by 35% while using about 50% less power and allows for the same amount of power consumption and 33% performance increase over the 5 nm FinFET process.


Gate-All-Around FETs - Picture credit: Samsung

Source: Toms Hardware (LINK)

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By AbhishekkumarThakur

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