Sunday, August 30, 2015

BTBAS Silicon nitride PEALD by TU Eindhoven, Oxford Instruments and ASM Microchemistry

Silicon nitride is one of the fastest growing single ALD layer applications in advanced CMOS (hard mask, liner, spacers, multi-patterning, ...). Here is a very good fundamental investigation of PEALD using a rather well known silicon precursor BTBAS in an ICP remote plasma ALD system from Oxford instruments.This is a joint publication between Oxford Instruments and ASM Microchemistry and University partners at Eindhoven University of Technology and Queen Mary University of London

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Harm C. M. Knoops, Eline M. J. Braeken, Koen de Peuter, Stephen E. Potts, Suvi Haukka, Viljami Pore, and Wilhelmus M. M. Kessels

ACS Appl. Mater. Interfaces, Article ASAP
DOI: 10.1021/acsami.5b06833 

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300–500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si = 1.4 ± 0.1, mass density = 2.9 ± 0.1 g/cm3, refractive index = 1.96 ± 0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

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