Monday, February 16, 2015

US and South Korean researchers claim record performing tri-gate InGaAs MOSFET

According to a report in Semiconductor Today, researchers based in USA and South Korea claim a record combination of subthreshold swing (82mV/decade, 0.5V drain bias), transconductance (1800μS/μm) and on-current (0.41mA/μm) for any tri-gate quantum well indium gallium arsenide (InGaAs) metal-oxide-semiconductor field-effect-transistor (MOSFET) [Tae-Woo Kim et al, IEEE Electron Device Letters, published online 20 January 2015]. 
The gate insulation consisted of 0.7nm of aluminium oxide (Al2O3) and 2nm of hafnium dioxide (HfO2) deposited by atomic layer deposition (ALD).
Process flow, cross-sectional schematic and TEM image of a tri-gate InGaAs MOSFET, from longitudinal and horizontal direction.

Process flow, cross-sectional schematic and TEM image of a tri-gate InGaAs MOSFET, from longitudinal and horizontal direction.
The team was based at SEMATECH Inc in the USA, KANC in South Korea, and GLOBALFOUNDRIES in the USA.