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It is truly amazing to see the progress of FMC in Dresden and the recent drive in the semiconductor industry for Ferro FETs. Continuously you read about involvement from many of the big names in the industry. Here is a very good overview of the current status written by Bryon Moyer at Semiengineering.
[Article in Semiengineering]: Ferroelectric FETs (FeFETs) and memory (FeRAM) are generating high levels of interest in the research community. Based on a physical mechanism that hasn’t yet been commercially exploited, they join the other interesting new physics ideas that are in various stages of commercialization.
“FeRAM is very promising, but it’s like all promising memory technologies — it takes a while to get beyond promising,” said Rob Aitken, fellow and director of technology on the research team at Arm. “It has the potential to have better benefits than the other new non-volatile memory (NVM) technologies that are on the table today.”
Ferroelectric behaviors are opening up opportunities for non-volatile memory, combined logic/memory functions, and neuromorphic modeling. While it’s still early days for the technology, developers are cautiously optimistic about its future.
Source/Full version: LINK
CEO interview: FMC’s Pourkeramati on roadmaps, turning away investors
https://www.eenewsanalog.com/news/ceo-interview-fmcs-pourkeramati-roadmaps-turning-away-investors
The annealing and zirconium quantity have a strong impact on the crystal arrangement. Source: FMC
