Plasma-Based Deposition Refines ALD for Next-Gen DRAM: 30% Higher k, 40× Lower Leakage

Researchers from POSTECH and UNIST in Korea have unveiled a new atomic-layer process using plasma-based deposition (PDP) to significantly improve DRAM capacitors. This innovation addresses a critical challenge in semiconductor manufacturing: enhancing the performance of high-k dielectric materials without introducing defects that cause electrical leakage. The PDP process refines the deposition of aluminum-doped titanium dioxide (ATO), enabling better charge storage and stability for next-generation devices.

The PDP technique introduces a controlled plasma treatment step after standard atomic layer deposition (ALD). By exposing the capacitor film to an argon/oxygen plasma, the process reorders the crystal lattice and fills oxygen vacancies—defects that typically cause instability and increased leakage currents in conventional ALD methods. This precise atomic-scale refinement is key to achieving superior performance.

The results of this breakthrough are highly promising, with the treated DRAM capacitors showing a roughly 30% higher dielectric constant and a nearly 40-fold reduction in leakage current compared to conventional methods. This enhances DRAM retention time, improves energy efficiency, and boosts overall device reliability. Beyond DRAM, this technology has potential applications for other next-gen electronic devices and energy storage systems.

Sources:

https://www.miragenews.com/new-process-boosts-semiconductor-performance-1557957/

Researchers Develop Innovative Process to Enhance Semiconductor Device PerformanceUNIST News Center | UNIST News Center