Intel Pushes Gallium Nitride (GaN) Technology to New Heights with 300mm GaN-on-TRSOI Substrates

Intel Foundry continues to redefine the future of semiconductor technology with groundbreaking advancements in gallium nitride (GaN) technology. At the IEEE International Electron Devices Meeting (IEDM) 2024, Intel showcased the industry’s first 300mm GaN-on-TRSOI substrates, setting a new benchmark for high-performance power and radio frequency (RF) electronics. This innovation is part of Intel’s larger commitment to solving critical challenges in AI, energy efficiency, and thermal management.

The use of 300mm GaN-on-TRSOI substrates enables superior performance by reducing signal loss and enhancing signal linearity. These substrates are engineered to support advanced integration schemes through backside substrate processing, offering significant benefits for applications in RF and power electronics. One of the standout achievements demonstrated was the fabrication of 30nm channel-length enhancement-mode GaN MOSHEMTs (metal-oxide-semiconductor high electron mobility transistors). These transistors achieved remarkable performance metrics, including an Ron x Coff of 80 femtoseconds and an fmax exceeding 500 GHz, making them ideal for cutting-edge RF switches.

Intel’s advancements in GaN technology are complemented by its focus on advanced memory integration, hybrid bonding, and modular system expansion. These innovations are designed to address the growing demands of AI and other high-performance computing applications, paving the way for more energy-efficient and thermally optimized systems. By pushing the boundaries of materials and integration technologies, Intel is positioning itself as a leader in driving semiconductor advancements for the trillion-transistor era.

Source: Intel IEDM 2024 Innovations