Wednesday, April 14, 2021

Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM) by Active Layer Parametrics (ALP) Inc.

ALP’s Differential Hall Effect Metrology (DHEM) technique is the only technique that directly measures active dopant concentration, mobility, and resistivity depth profiles through semiconductor layers at sub-nm depth resolution (www.alpinc.net).


Above, cross-sectional TEM images of the P ion-implanted samples after annealing and corresponding depth profiles from DHEM.

ALP´s latest work employing this innovative technology and ALPro(TM) electrical profiling tools are summarized in a new invited paper titled “Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)”, which will be presented at the 239th ECS Meeting (May 30 to June 3 2021).

They showcase data developed jointly with Imec, Belgium, and Taiwan Semiconductor Research Institute (TSRI, Hsinchu) in the paper. You can read the abstract at (https://ecs.confex.com/ecs/239/meetingapp.cgi/Paper/147952). If you are interested in reading the full paper, please contact Dr. Joshi below for a preprint.

Abhijeet 'AJ' Joshi, PhD
CTO/Co-Founder
Active Layer Parametrics (ALP) Inc.
info@alpinc.net

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