ALP’s Differential Hall Effect Metrology (DHEM) technique is the only technique that directly measures active dopant concentration, mobility, and resistivity depth profiles through semiconductor layers at sub-nm depth resolution (www.alpinc.net).
Above, cross-sectional TEM images of the P ion-implanted samples after annealing and corresponding depth profiles from DHEM.
ALP´s latest work employing this innovative technology and ALPro(TM) electrical profiling tools are summarized in a new invited paper titled “Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)”, which will be presented at the 239th ECS Meeting (May 30 to June 3 2021).
They showcase data developed jointly with Imec, Belgium, and Taiwan Semiconductor Research Institute (TSRI, Hsinchu) in the paper. You can read the abstract at (https://ecs.confex.com/ecs/239/meetingapp.cgi/Paper/147952). If you are interested in reading the full paper, please contact Dr. Joshi below for a preprint.
Abhijeet 'AJ' Joshi, PhD
CTO/Co-Founder
Active Layer Parametrics (ALP) Inc.
info@alpinc.net
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