Improved crystalline quality of Plasma ALD GaN ising plasma surface pretreatment

Semiconductor Today reports that Researchers based in China and the USA have improved the crystal quality of gallium nitride (GaN) thin films on sapphire from a 350°C low-temperature plasma-enhanced atomic layer deposition process (PE-ALD) using an in-situ bake and plasma substrate pretreatment.

Source: Baking and plasma-enhanced low-temperature gallium nitride atomic layer deposition, Moke Cooke, Semiconductor Today LINK

Journal Publicarion Sanjie Liu et al, Appl. Phys. Lett., vol116, p211601, 2020 https://doi.org/10.1063/5.0003021