As announced today at the Virtual AVS ALD Conference by Prof. Kessels - Congratulations to the winner of the 2019 Best ALD Paper Award, selected from papers presented at the 19th International Conference on Atomic Layer Deposition (ALD 2019) and published in JVST A.
Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, and Hajime Kiyono JVST A 38, 032409 (2020) Read More
Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, and Hajime Kiyono JVST A 38, 032409 (2020) Read More
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