Wednesday, June 6, 2018

Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching

JVST A Featured Article: Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors by Kang-Yi Lin, Chen Li. Sebastian Engelmann, Eric A. Joseph, Dominik Metzler and Gottlieb Oehrlein a collaboration between University of Maryland and IBM 
 
 

 
 

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