Thursday, April 12, 2018

Tuning PEALD film propperties by substrate biasing for planar and 3D applications

After having worked with dry etch people etching deep into silicon and advanced HKMG stack and other challenging and amazing things like longitudinal splitting of nanowires my experience is that they have a totally different level of insight to plasma processing technology than me the typical ALD guy. Substrate biasing is such a technology that we the usual suspects in ALD have limited insights to. You can almost hear how they laugh at us loud when we turn on our funky PEALD chambers and let the wafer float in an undefined potential state - it´s like taking a shower up in the international space station without any special precautions.

The TU Eindhoven Plasma Pro´s and their friends from Oxford Instruments, prove it time after time buy pushing out these great publications explaining to us who thinks plasmas are some sort of voodoo, They show us how it all really works in PEALD. Here is one of the most recent ones and next (April 19th) you may tune in to the Oxford Instruments Webinar and listen to Harm Knoops telling us how it really works (LINK).

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

Tahsin Faraz, Harm C. M. Knoops, Marcel A. Verheijen, Cristian A. A. van Helvoirt, Saurabh Karwal, Akhil Sharma, Vivek Beladiya, Adriana Szeghalmi, Dennis M. Hausmann, Jon Henri, Mariadriana Creatore, and Wilhelmus M. M. Kessels

ACS Appl. Mater. Interfaces, Article ASAP
Publication Date (Web): March 19, 2018

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