Wednesday, June 7, 2017

Another breakthrough in CMOS-compatible ferroelectric memory

Imec, the world-leading research and innovation hub in nanoelectronics and digital technology, announced today at the 2017 Symposia on VLSI Technology and Circuits the world's first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications. Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention. The achievement shows that ferro-electric memory is a highly promising technology at various points in the memory hierarchy, and as a new technology for storage class memory. Imec will further develop the concept in collaboration with the world's leading producers of memory ICs.

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