Tokyo, Japan and Espoo, Finland - 30 January 2017 - Hitachi High-Technologies Corporation (TSE:8036, Hitachi High-Tech) and Picosun Oy announce a revolutionary technological co-operation in plasma-enhanced atomic layer deposition (PE-ALD). The aim of this co-operation is to bring thin film coating technologies to a completely new level. Hitachi High-Tech’s and Picosun’s joint breakthrough, the novel Microwave Electron Cyclotron Resonance (ECR) ALD technology will disrupt all advanced semiconductor industries.
Promotion Video: MECRALD - novel, revolutionary plasma-enhanced ALD technology By Hitachi High-Technologies and Picosun. (youtube.com)
In the PE-ALD reactor, Hitachi High-Tech’s powerful ECR plasma generator is integrated with Picosun’s industry-proven, digitally controlled ALD system. Consequently, the quality of the deposited materials is substantially better, and the deposition process is much more precise than existing traditional ALD and plasma-enhanced ALD methods.
Some superior results for various nitride and oxide films have been confirmed with 300 mm semiconductor wafers so far and some other process applications are under evaluation.
Some superior results for various nitride and oxide films have been confirmed with 300 mm semiconductor wafers so far and some other process applications are under evaluation.
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