Gallium nitride thin-film transistors produced in 200°C process by hollow cathode PEALD

Hollow cathode plasma sources, are an alternative to ICP and CCP sources and has been successfully introduced for PEALD by Meaglow Ltd. Semiconductor Today reports: Bilkent University in Turkey has developed a low-temperature process to create gallium nitride (GaN) back-gated thin-film transistors (TFTs) on flexible and rigid substrates [S. Bolat et al, Appl. Phys. Lett., vol 109, p233504, 2016]. The team reports that the "overall fabrication thermal budget is below 200°C, the lowest reported for the GaN-based transistors so far." 

According to the article in Applied Physics Letters, the GaN thin films were grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C using the popular Ultratech Cambridge Nantech Fiji PEALD system equipped with an HCP source from Meaglow. 

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Ultratech CNT Fiji

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