Tokyo Electron showcase "A spacer-on-spacer scheme for self-aligned multiple patterning and integration" using ALD which is claimed to be a "novel, low-cost spacer-on-spacer pitch-splitting approach is targeted at sub-32nm pitch for 7nm technology nodes and beyond"
The ALD process rauns at room-temperature depositing a silicon dioxide film that is compatible with organic materials as the first spacer.
Please read the full article in SPIE News Room here.
Illustration of the proposed spacer-on-spacer SAQP integration. Depo: Deposition. Pull: Removal (of spacer). Figure form SPIE Newsroom.
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