%20(1).png)
Scientists at Namlab gGmbH, Leibniz Institute for Solid State and Materials Research and Fraunhofer IPMS-CNT Dresden, Germany together with Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, TN, USA provides conclusive evidence to intrinsic ferroic behavior in Si-doped HfO2.
Dominik Martin, Johannes Müller, Tony Schenk, Tomas M. Arruda, Amit Kumar, Evgheni Strelcov, Ekaterina Yurchuk, Stefan Müller, Darius Pohl, Uwe Schröder, Sergei V. Kalinin, and Thomas Mikolajick
Advanced Materials Article first published online: 28 OCT 2014
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
Advanced Materials Article first published online: 28 OCT 2014
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
No comments:
Post a Comment