Here is a new paper from NaMLab on ferroelectric hafnium oxide applications entitled "Hafnium oxide as an enabler for competitive ferroelectric devices"
Ferroelectric materials offer the promise to realize low power memory
devices and show negative capacitance operation that could lead to novel
electronic devices. Although intense research on realizing different
memory device concepts based on three different readout schemes have
been subject to intense research, the commercial success is limited to
low density ferroelectric random access memories based on a direct
capacitor readout. The complexity of integrating ferroelectric materials
into CMOS processes has limited successful implementations.
Ferroelectricity in hafnium oxide related material systems could
overcome this limitations for memories and at the same time enable new
devices based on negative capacitance.
Published in:
2020 IEEE Silicon Nanoelectronics Workshop (SNW)
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