Ferroelectric hafnium oxide and related materials have been developed in Dresden, Germany for over 10 years now. At the IEDM2017 in December Globalfoundries Fab1 and their partners (NaMLab, Fraunhofer and Ferroelectric Memory GmbH) presented their latest results using the Fab1 22nm FDSOI technology with embedded NVM cells embedded as adopted "standard" high-k / metal gate stacks in the front end process module as so called FeFETs.
Previously much of the work was based on Globalfoundries Fab1 28 nm technology so the move to 22 nm really proves that scalig is back to ferroelectric memory technologies as shown on LinkedIn by Prof. Mikolajick (NaMLab) below.. Since the high-k (doped HfO2) is deposited by ALD this technology is scalable also for FinFETs so don´t be surprised if Globalfoundries would soon present also FeFinFETs.
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
IEEE Xplore: 25 January 2018 DOI: 10.1109/IEDM.2017.8268425
Abstract: We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm2 At this point program/erase endurance cycles up to 105 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.