Tuesday, August 30, 2016

Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Readers of this blog may have noticed that I got a new hobby and that I´ve been looking into some etching (ALE) on the side. Here is some interesting new results in etching InP Fins for future CMOS by a chemical method "enabled by inverse metal-assisted chemical etching". All recently published by University of Illinois researchers in Silicon Semiconductors and in the IEEE ElectronDevice Letter below. (Thanks Nicklas Nilsson for sharing this one).

A cross-sectional microscope image of a fin transistor. The indium phosphide semiconductor fin is overlaid with insulators and metals to make a working transistor. Image by Yi Song (as published in Silicon Semiconductors)

Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song et al
IEEE Electron Device Letters > Volume: 37 Issue: 8 

Abstract:
Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105). Published in: IEEE Electron Device Letters ( Volume: 37, Issue: 8, Aug. 2016 )