Saturday, August 13, 2016

Tokyo Electron - A spacer-on-spacer scheme for self-aligned multiple patterning and integration

Tokyo Electron showcase "A spacer-on-spacer scheme for self-aligned multiple patterning and integration" using ALD which is claimed to be a "novel, low-cost spacer-on-spacer pitch-splitting approach is targeted at sub-32nm pitch for 7nm technology nodes and beyond"

The ALD process rauns at room-temperature depositing a silicon dioxide film that is compatible with organic materials as the first spacer.

Please read the full article in SPIE News Room here.


Illustration of the proposed spacer-on-spacer SAQP integration. Depo: Deposition. Pull: Removal (of spacer). Figure form SPIE Newsroom.