Chipmetrics expands metrology portfolio with advanced test chips and wafer solutions for next-gen ALD semiconductor processes

Finnish metrology specialist Chipmetrics has expanded its portfolio with a new range of advanced test chips and wafer solutions aimed at accelerating prototyping and enhancing precision in next-generation semiconductor process development. The new releases include the ASD-1b area-selective deposition chip, a High Surface Area wafer, and pre-coated High Aspect Ratio test structures such as PillarHall and VHAR1. These tools are designed to simulate real-world manufacturing conditions with greater accuracy, helping engineers optimise processes more efficiently and reduce development cycles in ALD and other thin-film applications.

The ASD-1b chip provides a tricolour material layout with metal, SiO₂ and Si₃N₄ surfaces, enabling detailed assessment of selectivity and defectivity across multiple deposition techniques. Meanwhile, the new HSA wafer delivers up to 300 times greater surface area sensitivity through deep trench designs, supporting ultra-sensitive material studies. By offering pre-coated HAR structures, Chipmetrics addresses the growing industry demand for realistic conformality and uniformity testing. According to CEO Mikko Utriainen, these solutions are set to streamline benchmarking of new chemistries and processes, giving development teams faster, clearer feedback to advance semiconductor innovation.

Chipmetrics’ new metrology tools for advanced thin film process development. Left: Pre-coated high aspect ratio test structures, including PillarHall® (lateral AR > 1000) and VHAR1 (vertical AR = 200), for evaluating conformality and film penetration. Centre: The ASD-1b area selective deposition test chip with tricolour material layout for testing selectivity across Cu, SiO₂ and Si₃N₄ surfaces. Right: High Surface Area (HSA) wafer combining a 150 mm VHAR1 wafer within a 300 mm pocket wafer, providing up to 300× enhanced surface area for sensitive material studies.

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Chipmetrics Expands Product Line with Advanced ALD Test Chips and Wafer Solutions - Chipmetrics

Shaping the Future of Thin Films: New Trends in Thermal ALD Chemistry

A new review published in the Journal of Vacuum Science & Technology A takes a detailed look at recent developments in thermal atomic layer deposition (ALD) chemistry, drawing on data from the comprehensive ALD database at atomiclimits.com. The analysis highlights how process innovations have accelerated since 2010, with more than half of all reported ALD processes emerging in the past 15 years. Binary oxides remain the dominant material group, but there has been a steady increase in the deposition of non-oxides and ternary compounds. More recently, classes such as elemental metals, two-dimensional transition metal dichalcogenides, and halides have gained prominence, driven largely by application demands in microelectronics, energy technologies, and catalysis. The study also notes the introduction of new elements into the ALD portfolio after 2010, including alkali metals and more exotic elements such as rhenium, osmium, gold, and antimony, each requiring unique process routes.

The review underscores the critical role of precursor chemistry in enabling these advances. While traditional precursors such as halides, alkoxides, and β-diketonates laid the foundation, newer processes have leaned heavily on amides and imides, followed by cyclopentadienyl compounds. However, the most significant trend is the growing reliance on heteroleptic precursors, which combine multiple ligand types to fine-tune key properties such as volatility, reactivity, and thermal stability. This flexibility has been instrumental in broadening the range of materials accessible via ALD and tailoring processes to meet the specific requirements of cutting-edge applications. Overall, the work reflects how ALD chemistry has evolved from relatively narrow beginnings into a dynamic and application-driven field with expanding industrial significance.

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The review is based on ALD chemistries collected from the AtomicLimits ALD precursor database: Database of ALD processes

Popov, G.; Mattinen, M.; Vihervaara, A.; Leskelä, M. (2025). “Recent trends in thermal atomic layer deposition chemistry.” Journal of Vacuum Science & Technology A, 43, 030801. https://doi.org/10.1116/6.0004320